Abstract
Metal (1 vol%)-doped WO 3 thin film NO 2 sensors were fabricated. The WO 3-based thin films were deposited as a sensing layer using a thermal evaporator and annealed at 600°C in air for 2 hours. The sensitivity (R gas/R air) to 5 ppm NO 2 measured at the operating temperature of 320°C was reached about 50 which appears the highest sensitivity at the pure WO 3 thin film sensors. The particle size and porosity of sensing films affected NO X-sensing properties of WO 3-based thin film gas sensor. For good sensing property and easy fabrication, the thin film layer could be employed a commercial gas detector and a micro-type NO X gas sensor.
| Original language | English |
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| Pages (from-to) | S1092-S1096 |
| Journal | Journal of the Korean Physical Society |
| Volume | 35 |
| Issue number | SUPPL. 4 |
| State | Published - 1999 |