TY - JOUR
T1 - Non-linear I-V characteristics of TiOy film by optimizing thickness and trap density for selector-less ReRAM
AU - Tamanna, Nusrat
AU - Misha, Saiful Haque
AU - Prakash, Amit
AU - Lee, Daeseok
AU - Woo, Jiyong
AU - Cha, Euijun
AU - Attarimashalkoubeh, Behnoush
AU - Song, Jeonghwan
AU - Lee, Sangheon
AU - Moon, Kibong
AU - Hwang, Hyunsang
PY - 2014
Y1 - 2014
N2 - The non-linear current voltage (I-V) characteristics in low-resistance state (LRS) of resistive random access memory is the most important device parameter for cross-point memory applications. An ultrathin TiOy tunnel barrier can significantly improve nonlinear characteristics of resistive random access memory. Based on mathematical modeling, we verified that direct tunneling and trap assisted tunneling of TiOy layer are dominant in low voltage regime and high voltage regime, respectively. Tomaximize non-linearity, we need to reduce direct tunneling at low voltage by increasing film thickness and increase trap assisted tunneling at high voltage by increasing trap density.
AB - The non-linear current voltage (I-V) characteristics in low-resistance state (LRS) of resistive random access memory is the most important device parameter for cross-point memory applications. An ultrathin TiOy tunnel barrier can significantly improve nonlinear characteristics of resistive random access memory. Based on mathematical modeling, we verified that direct tunneling and trap assisted tunneling of TiOy layer are dominant in low voltage regime and high voltage regime, respectively. Tomaximize non-linearity, we need to reduce direct tunneling at low voltage by increasing film thickness and increase trap assisted tunneling at high voltage by increasing trap density.
UR - https://www.scopus.com/pages/publications/84906669969
U2 - 10.1149/2.0021410ssl
DO - 10.1149/2.0021410ssl
M3 - Article
AN - SCOPUS:84906669969
SN - 2162-8742
VL - 3
SP - P117-P119
JO - ECS Solid State Letters
JF - ECS Solid State Letters
IS - 10
ER -