Non-quasi-static modeling of silicon nanowire metal-oxide-semiconductor field-effect transistor and its model verification up to 1 THz

In this work, the radio-frequency (RF) performances of a silicon nanowire (SNW) metal-oxide-semiconductor field-effect transistor (MOSFET) were modeled by being grafted into the non-quasi-static (NQS) small-signal equivalent circuit for the first time. The parameters were analytically extracted from three-dimensional (3D) device simulations. The cutoff frequencies of an SNW MOSFET with a 30 nm channel length and a 5nm radius were 504 and 545 GHz in the linear and saturation regions, respectively. The reliability of modeling results was verified by the simulations including realistic models. It was confirmed that the SNW MOSFET would be the promising candidate as a core component for RF systems aiming 1 THz operation.