Non-quasi-static RF model for SOI finFET and its verification

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Abstract

The radio frequency (RF) model of SOI FinFETs with gate length of 40 nm is verified by using a 3-dimensional (3-D) device simulator. This paper shows the equivalent circuit model which can be used in the circuit analysis simulator. The RMS modeling error of Y-parameter was calculated to be only 0.3%.

Original languageEnglish
Pages (from-to)160-164
Number of pages5
JournalJournal of Semiconductor Technology and Science
Volume10
Issue number2
DOIs
StatePublished - 2010

Keywords

  • Model
  • Model verification
  • Parameter extraction
  • Radio frequency
  • Soi finfet

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