Non-quasi-static RF model for SOI finFET and its verification

In Man Kang

doi:10.5573/JSTS.2010.10.2.160

Non-quasi-static RF model for SOI finFET and its verification

In Man Kang

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The radio frequency (RF) model of SOI FinFETs with gate length of 40 nm is verified by using a 3-dimensional (3-D) device simulator. This paper shows the equivalent circuit model which can be used in the circuit analysis simulator. The RMS modeling error of Y-parameter was calculated to be only 0.3%.

Original language	English
Pages (from-to)	160-164
Number of pages	5
Journal	Journal of Semiconductor Technology and Science
Volume	10
Issue number	2
DOIs	https://doi.org/10.5573/JSTS.2010.10.2.160
State	Published - 2010

Keywords

Model
Model verification
Parameter extraction
Radio frequency
Soi finfet

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10.5573/JSTS.2010.10.2.160

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title = "Non-quasi-static RF model for SOI finFET and its verification",

abstract = "The radio frequency (RF) model of SOI FinFETs with gate length of 40 nm is verified by using a 3-dimensional (3-D) device simulator. This paper shows the equivalent circuit model which can be used in the circuit analysis simulator. The RMS modeling error of Y-parameter was calculated to be only 0.3%.",

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AB - The radio frequency (RF) model of SOI FinFETs with gate length of 40 nm is verified by using a 3-dimensional (3-D) device simulator. This paper shows the equivalent circuit model which can be used in the circuit analysis simulator. The RMS modeling error of Y-parameter was calculated to be only 0.3%.

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KW - Parameter extraction

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JO - Journal of Semiconductor Technology and Science

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Non-quasi-static RF model for SOI finFET and its verification

Abstract

Keywords

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