Normally-off AlGaN/GaN-based MOS-HEMT with self-terminating TMAH wet recess etching

Dong Hyeok Son; Young Woo Jo; Chul Ho Won; Jun Hyeok Lee; Jae Hwa Seo; Sang Heung Lee; Jong Won Lim; Ji Heon Kim; In Man Kang; Sorin Cristoloveanu; Jung Hee Lee

doi:10.1016/j.sse.2017.11.002

Normally-off AlGaN/GaN-based MOS-HEMT with self-terminating TMAH wet recess etching

Dong Hyeok Son, Young Woo Jo, Chul Ho Won, Jun Hyeok Lee, Jae Hwa Seo, Sang Heung Lee, Jong Won Lim, Ji Heon Kim, In Man Kang, Sorin Cristoloveanu, Jung Hee Lee

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Normally-off AlGaN/GaN-based MOS-HEMT has been fabricated by utilizing damage-free self-terminating tetramethyl ammonium hydroxide (TMAH) recess etching. The device exhibited a threshold voltage of +2.0 V with good uniformity, extremely small hysteresis of ∼20 mV, and maximum drain current of 210 mA/mm. The device also exhibited excellent off-state performances, such as breakdown voltage of ∼800 V with off-state leakage current as low as ∼10⁻¹² A and high on/off current ratio (I_on/I_off) of 10¹⁰. These excellent device performances are believed to be due to the high quality recessed surface, provided by the simple self-terminating TMAH etching.

Original language	English
Pages (from-to)	7-12
Number of pages	6
Journal	Solid-State Electronics
Volume	141
DOIs	https://doi.org/10.1016/j.sse.2017.11.002
State	Published - Mar 2018

Keywords

Gate recess
Negligible hysteresis
Normally-off
Self-terminating wet etching
TMAH solution

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10.1016/j.sse.2017.11.002

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@article{4816ed72f1724dc7a02f82989ba3faa8,

title = "Normally-off AlGaN/GaN-based MOS-HEMT with self-terminating TMAH wet recess etching",

abstract = "Normally-off AlGaN/GaN-based MOS-HEMT has been fabricated by utilizing damage-free self-terminating tetramethyl ammonium hydroxide (TMAH) recess etching. The device exhibited a threshold voltage of +2.0 V with good uniformity, extremely small hysteresis of ∼20 mV, and maximum drain current of 210 mA/mm. The device also exhibited excellent off-state performances, such as breakdown voltage of ∼800 V with off-state leakage current as low as ∼10−12 A and high on/off current ratio (Ion/Ioff) of 1010. These excellent device performances are believed to be due to the high quality recessed surface, provided by the simple self-terminating TMAH etching.",

keywords = "Gate recess, Negligible hysteresis, Normally-off, Self-terminating wet etching, TMAH solution",

author = "Son, {Dong Hyeok} and Jo, {Young Woo} and Won, {Chul Ho} and Lee, {Jun Hyeok} and Seo, {Jae Hwa} and Lee, {Sang Heung} and Lim, {Jong Won} and Kim, {Ji Heon} and Kang, {In Man} and Sorin Cristoloveanu and Lee, {Jung Hee}",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier Ltd",

year = "2018",

month = mar,

doi = "10.1016/j.sse.2017.11.002",

language = "English",

volume = "141",

pages = "7--12",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd.",

}

TY - JOUR

T1 - Normally-off AlGaN/GaN-based MOS-HEMT with self-terminating TMAH wet recess etching

AU - Son, Dong Hyeok

AU - Jo, Young Woo

AU - Won, Chul Ho

AU - Lee, Jun Hyeok

AU - Seo, Jae Hwa

AU - Lee, Sang Heung

AU - Lim, Jong Won

AU - Kim, Ji Heon

AU - Kang, In Man

AU - Cristoloveanu, Sorin

AU - Lee, Jung Hee

PY - 2018/3

Y1 - 2018/3

N2 - Normally-off AlGaN/GaN-based MOS-HEMT has been fabricated by utilizing damage-free self-terminating tetramethyl ammonium hydroxide (TMAH) recess etching. The device exhibited a threshold voltage of +2.0 V with good uniformity, extremely small hysteresis of ∼20 mV, and maximum drain current of 210 mA/mm. The device also exhibited excellent off-state performances, such as breakdown voltage of ∼800 V with off-state leakage current as low as ∼10−12 A and high on/off current ratio (Ion/Ioff) of 1010. These excellent device performances are believed to be due to the high quality recessed surface, provided by the simple self-terminating TMAH etching.

AB - Normally-off AlGaN/GaN-based MOS-HEMT has been fabricated by utilizing damage-free self-terminating tetramethyl ammonium hydroxide (TMAH) recess etching. The device exhibited a threshold voltage of +2.0 V with good uniformity, extremely small hysteresis of ∼20 mV, and maximum drain current of 210 mA/mm. The device also exhibited excellent off-state performances, such as breakdown voltage of ∼800 V with off-state leakage current as low as ∼10−12 A and high on/off current ratio (Ion/Ioff) of 1010. These excellent device performances are believed to be due to the high quality recessed surface, provided by the simple self-terminating TMAH etching.

KW - Gate recess

KW - Negligible hysteresis

KW - Normally-off

KW - Self-terminating wet etching

KW - TMAH solution

UR - http://www.scopus.com/inward/record.url?scp=85036568808&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2017.11.002

DO - 10.1016/j.sse.2017.11.002

M3 - Article

AN - SCOPUS:85036568808

SN - 0038-1101

VL - 141

SP - 7

EP - 12

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Normally-off AlGaN/GaN-based MOS-HEMT with self-terminating TMAH wet recess etching

Abstract

Keywords

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