Normally-off AlGaN/GaN-based MOS-HEMT with self-terminating TMAH wet recess etching

Dong Hyeok Son; Young Woo Jo; Chul Ho Won; Jun Hyeok Lee; Jae Hwa Seo; Sang Heung Lee; Jong Won Lim; Ji Heon Kim; In Man Kang; Sorin Cristoloveanu; Jung Hee Lee

doi:10.1016/j.sse.2017.11.002

Normally-off AlGaN/GaN-based MOS-HEMT with self-terminating TMAH wet recess etching

Dong Hyeok Son
, Young Woo Jo
, Chul Ho Won
, Jun Hyeok Lee
, Jae Hwa Seo
, Sang Heung Lee
, Jong Won Lim
, Ji Heon Kim
, In Man Kang
, Sorin Cristoloveanu
, Jung Hee Lee

School of Electronics Engineering

Kyungpook National University
Electronics and Telecommunications Research Institute
Korean Agency for Defense Development
Grenoble Institute of Technology

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Normally-off AlGaN/GaN-based MOS-HEMT has been fabricated by utilizing damage-free self-terminating tetramethyl ammonium hydroxide (TMAH) recess etching. The device exhibited a threshold voltage of +2.0 V with good uniformity, extremely small hysteresis of ∼20 mV, and maximum drain current of 210 mA/mm. The device also exhibited excellent off-state performances, such as breakdown voltage of ∼800 V with off-state leakage current as low as ∼10⁻¹² A and high on/off current ratio (I_on/I_off) of 10¹⁰. These excellent device performances are believed to be due to the high quality recessed surface, provided by the simple self-terminating TMAH etching.

Original language	English
Pages (from-to)	7-12
Number of pages	6
Journal	Solid-State Electronics
Volume	141
DOIs	https://doi.org/10.1016/j.sse.2017.11.002
State	Published - Mar 2018

Keywords

Gate recess
Negligible hysteresis
Normally-off
Self-terminating wet etching
TMAH solution

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10.1016/j.sse.2017.11.002

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@article{4816ed72f1724dc7a02f82989ba3faa8,

title = "Normally-off AlGaN/GaN-based MOS-HEMT with self-terminating TMAH wet recess etching",

abstract = "Normally-off AlGaN/GaN-based MOS-HEMT has been fabricated by utilizing damage-free self-terminating tetramethyl ammonium hydroxide (TMAH) recess etching. The device exhibited a threshold voltage of +2.0 V with good uniformity, extremely small hysteresis of ∼20 mV, and maximum drain current of 210 mA/mm. The device also exhibited excellent off-state performances, such as breakdown voltage of ∼800 V with off-state leakage current as low as ∼10−12 A and high on/off current ratio (Ion/Ioff) of 1010. These excellent device performances are believed to be due to the high quality recessed surface, provided by the simple self-terminating TMAH etching.",

keywords = "Gate recess, Negligible hysteresis, Normally-off, Self-terminating wet etching, TMAH solution",

author = "Son, \{Dong Hyeok\} and Jo, \{Young Woo\} and Won, \{Chul Ho\} and Lee, \{Jun Hyeok\} and Seo, \{Jae Hwa\} and Lee, \{Sang Heung\} and Lim, \{Jong Won\} and Kim, \{Ji Heon\} and Kang, \{In Man\} and Sorin Cristoloveanu and Lee, \{Jung Hee\}",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier Ltd",

year = "2018",

month = mar,

doi = "10.1016/j.sse.2017.11.002",

language = "English",

volume = "141",

pages = "7--12",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd.",

}

TY - JOUR

T1 - Normally-off AlGaN/GaN-based MOS-HEMT with self-terminating TMAH wet recess etching

AU - Son, Dong Hyeok

AU - Jo, Young Woo

AU - Won, Chul Ho

AU - Lee, Jun Hyeok

AU - Seo, Jae Hwa

AU - Lee, Sang Heung

AU - Lim, Jong Won

AU - Kim, Ji Heon

AU - Kang, In Man

AU - Cristoloveanu, Sorin

AU - Lee, Jung Hee

PY - 2018/3

Y1 - 2018/3

N2 - Normally-off AlGaN/GaN-based MOS-HEMT has been fabricated by utilizing damage-free self-terminating tetramethyl ammonium hydroxide (TMAH) recess etching. The device exhibited a threshold voltage of +2.0 V with good uniformity, extremely small hysteresis of ∼20 mV, and maximum drain current of 210 mA/mm. The device also exhibited excellent off-state performances, such as breakdown voltage of ∼800 V with off-state leakage current as low as ∼10−12 A and high on/off current ratio (Ion/Ioff) of 1010. These excellent device performances are believed to be due to the high quality recessed surface, provided by the simple self-terminating TMAH etching.

AB - Normally-off AlGaN/GaN-based MOS-HEMT has been fabricated by utilizing damage-free self-terminating tetramethyl ammonium hydroxide (TMAH) recess etching. The device exhibited a threshold voltage of +2.0 V with good uniformity, extremely small hysteresis of ∼20 mV, and maximum drain current of 210 mA/mm. The device also exhibited excellent off-state performances, such as breakdown voltage of ∼800 V with off-state leakage current as low as ∼10−12 A and high on/off current ratio (Ion/Ioff) of 1010. These excellent device performances are believed to be due to the high quality recessed surface, provided by the simple self-terminating TMAH etching.

KW - Gate recess

KW - Negligible hysteresis

KW - Normally-off

KW - Self-terminating wet etching

KW - TMAH solution

UR - https://www.scopus.com/pages/publications/85036568808

U2 - 10.1016/j.sse.2017.11.002

DO - 10.1016/j.sse.2017.11.002

M3 - Article

AN - SCOPUS:85036568808

SN - 0038-1101

VL - 141

SP - 7

EP - 12

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Normally-off AlGaN/GaN-based MOS-HEMT with self-terminating TMAH wet recess etching

Abstract

Keywords

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