Normally off GaN MOSFET based on AlGaN/GaN heterostructure with extremely high 2DEG density grown on silicon substrate

Ki Sik Im; Jong Bong Ha; Ki Won Kim; Jong Sub Lee; Dong Seok Kim; Sung Ho Hahm; Jung Hee Lee

doi:10.1109/LED.2009.2039024

Normally off GaN MOSFET based on AlGaN/GaN heterostructure with extremely high 2DEG density grown on silicon substrate

Ki Sik Im
, Jong Bong Ha
, Ki Won Kim
, Jong Sub Lee
, Dong Seok Kim
, Sung Ho Hahm
, Jung Hee Lee

School of Electronics Engineering

Kyungpook National University

Research output: Contribution to journal › Article › peer-review

163 Scopus citations

Abstract

A normally off GaN MOSFET was proposed by utilizing an extremely high 2-D electron-gas density >10¹⁴/cm²) at an AlGaN/GaN heterostructure as source and drain, which can be obtained by controlling the tensile stress accompanied with the growth of GaN on silicon substrate. The fabricated MOSFET with an Al₂O₃ gate insulator exhibited excellent device performance, such as a threshold voltage of 2 V, drain current of 353 mA/mm, extrinsic transconductance of 98 mS/mm, and field-effect mobility of 225 cm²/V s.

Original language	English
Article number	5404411
Pages (from-to)	192-194
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	3
DOIs	https://doi.org/10.1109/LED.2009.2039024
State	Published - Mar 2010

Keywords

2-D electron gas (2DEG)
GaN
MOSFETs
Normally off
Silicon substrate

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10.1109/LED.2009.2039024

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title = "Normally off GaN MOSFET based on AlGaN/GaN heterostructure with extremely high 2DEG density grown on silicon substrate",

abstract = "A normally off GaN MOSFET was proposed by utilizing an extremely high 2-D electron-gas density >1014/cm2) at an AlGaN/GaN heterostructure as source and drain, which can be obtained by controlling the tensile stress accompanied with the growth of GaN on silicon substrate. The fabricated MOSFET with an Al2O3 gate insulator exhibited excellent device performance, such as a threshold voltage of 2 V, drain current of 353 mA/mm, extrinsic transconductance of 98 mS/mm, and field-effect mobility of 225 cm2/V s.",

keywords = "2-D electron gas (2DEG), GaN, MOSFETs, Normally off, Silicon substrate",

author = "Im, \{Ki Sik\} and Ha, \{Jong Bong\} and Kim, \{Ki Won\} and Lee, \{Jong Sub\} and Kim, \{Dong Seok\} and Hahm, \{Sung Ho\} and Lee, \{Jung Hee\}",

year = "2010",

month = mar,

doi = "10.1109/LED.2009.2039024",

language = "English",

volume = "31",

pages = "192--194",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Normally off GaN MOSFET based on AlGaN/GaN heterostructure with extremely high 2DEG density grown on silicon substrate

AU - Im, Ki Sik

AU - Ha, Jong Bong

AU - Kim, Ki Won

AU - Lee, Jong Sub

AU - Kim, Dong Seok

AU - Hahm, Sung Ho

AU - Lee, Jung Hee

PY - 2010/3

Y1 - 2010/3

N2 - A normally off GaN MOSFET was proposed by utilizing an extremely high 2-D electron-gas density >1014/cm2) at an AlGaN/GaN heterostructure as source and drain, which can be obtained by controlling the tensile stress accompanied with the growth of GaN on silicon substrate. The fabricated MOSFET with an Al2O3 gate insulator exhibited excellent device performance, such as a threshold voltage of 2 V, drain current of 353 mA/mm, extrinsic transconductance of 98 mS/mm, and field-effect mobility of 225 cm2/V s.

AB - A normally off GaN MOSFET was proposed by utilizing an extremely high 2-D electron-gas density >1014/cm2) at an AlGaN/GaN heterostructure as source and drain, which can be obtained by controlling the tensile stress accompanied with the growth of GaN on silicon substrate. The fabricated MOSFET with an Al2O3 gate insulator exhibited excellent device performance, such as a threshold voltage of 2 V, drain current of 353 mA/mm, extrinsic transconductance of 98 mS/mm, and field-effect mobility of 225 cm2/V s.

KW - 2-D electron gas (2DEG)

KW - GaN

KW - MOSFETs

KW - Normally off

KW - Silicon substrate

UR - https://www.scopus.com/pages/publications/77649190280

U2 - 10.1109/LED.2009.2039024

DO - 10.1109/LED.2009.2039024

M3 - Article

AN - SCOPUS:77649190280

SN - 0741-3106

VL - 31

SP - 192

EP - 194

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 3

M1 - 5404411

ER -

Normally off GaN MOSFET based on AlGaN/GaN heterostructure with extremely high 2DEG density grown on silicon substrate

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Keywords

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