Normally-off GaN n-MOSFET with schottky-barrier source and drain on a p-GaN on silicon substrate

Heon Bok Lee; Hyun Ick Cho; Kyong Hum Back; Hyun Su An; Jung Hee Lee; Sung Ho Hahm

doi:10.1109/EDSSC.2005.1635396

Normally-off GaN n-MOSFET with schottky-barrier source and drain on a p-GaN on silicon substrate

Heon Bok Lee, Hyun Ick Cho, Kyong Hum Back, Hyun Su An, Jung Hee Lee, Sung Ho Hahm

School of Electronics Engineering

Kyungpook National University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We fabricated a schottky barrier metal oxide semiconductor field effect transistor (SB-MOSFET) for the first time on a p-GaN with silicon auto doping into the nitrogen site, grown on silicon substrate. The source/drain and gate metals were formed by aluminum and gold, respectively. PECVD SiO₂ was used as a gate dielectric. The fabricated devices exhibited threshold voltage of 1.65 V, and maximum transconductance of 1.6 mS/mm at V_DS=5 V. The normalized on-current was 3 mA/mm and the off-current was as low as 3×10^-9 A/mm.

Original language	English
Title of host publication	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	791-794
Number of pages	4
ISBN (Print)	0780393392, 9780780393394
DOIs	https://doi.org/10.1109/EDSSC.2005.1635396
State	Published - 2005
Event	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC - Howloon, Hong Kong Duration: 19 Dec 2005 → 21 Dec 2005

Publication series

Name	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

Conference

Conference	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Country/Territory	Hong Kong
City	Howloon
Period	19/12/05 → 21/12/05

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10.1109/EDSSC.2005.1635396

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Lee, H. B., Cho, H. I., Back, K. H., An, H. S., Lee, J. H., & Hahm, S. H. (2005). Normally-off GaN n-MOSFET with schottky-barrier source and drain on a p-GaN on silicon substrate. In 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC (pp. 791-794). Article 1635396 (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2005.1635396

Lee, Heon Bok ; Cho, Hyun Ick ; Back, Kyong Hum et al. / Normally-off GaN n-MOSFET with schottky-barrier source and drain on a p-GaN on silicon substrate. 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. Institute of Electrical and Electronics Engineers Inc., 2005. pp. 791-794 (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC).

@inproceedings{a997649f600d4f889f3353441f3443ab,

title = "Normally-off GaN n-MOSFET with schottky-barrier source and drain on a p-GaN on silicon substrate",

abstract = "We fabricated a schottky barrier metal oxide semiconductor field effect transistor (SB-MOSFET) for the first time on a p-GaN with silicon auto doping into the nitrogen site, grown on silicon substrate. The source/drain and gate metals were formed by aluminum and gold, respectively. PECVD SiO2 was used as a gate dielectric. The fabricated devices exhibited threshold voltage of 1.65 V, and maximum transconductance of 1.6 mS/mm at VDS=5 V. The normalized on-current was 3 mA/mm and the off-current was as low as 3×10-9 A/mm.",

author = "Lee, {Heon Bok} and Cho, {Hyun Ick} and Back, {Kyong Hum} and An, {Hyun Su} and Lee, {Jung Hee} and Hahm, {Sung Ho}",

year = "2005",

doi = "10.1109/EDSSC.2005.1635396",

language = "English",

isbn = "0780393392",

series = "2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "791--794",

booktitle = "2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC",

address = "United States",

note = "2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC ; Conference date: 19-12-2005 Through 21-12-2005",

}

Lee, HB, Cho, HI, Back, KH, An, HS, Lee, JH & Hahm, SH 2005, Normally-off GaN n-MOSFET with schottky-barrier source and drain on a p-GaN on silicon substrate. in 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC., 1635396, 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC, Institute of Electrical and Electronics Engineers Inc., pp. 791-794, 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC, Howloon, Hong Kong, 19/12/05. https://doi.org/10.1109/EDSSC.2005.1635396

Normally-off GaN n-MOSFET with schottky-barrier source and drain on a p-GaN on silicon substrate. / Lee, Heon Bok; Cho, Hyun Ick; Back, Kyong Hum et al.
2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. Institute of Electrical and Electronics Engineers Inc., 2005. p. 791-794 1635396 (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Normally-off GaN n-MOSFET with schottky-barrier source and drain on a p-GaN on silicon substrate

AU - Lee, Heon Bok

AU - Cho, Hyun Ick

AU - Back, Kyong Hum

AU - An, Hyun Su

AU - Lee, Jung Hee

AU - Hahm, Sung Ho

PY - 2005

Y1 - 2005

N2 - We fabricated a schottky barrier metal oxide semiconductor field effect transistor (SB-MOSFET) for the first time on a p-GaN with silicon auto doping into the nitrogen site, grown on silicon substrate. The source/drain and gate metals were formed by aluminum and gold, respectively. PECVD SiO2 was used as a gate dielectric. The fabricated devices exhibited threshold voltage of 1.65 V, and maximum transconductance of 1.6 mS/mm at VDS=5 V. The normalized on-current was 3 mA/mm and the off-current was as low as 3×10-9 A/mm.

AB - We fabricated a schottky barrier metal oxide semiconductor field effect transistor (SB-MOSFET) for the first time on a p-GaN with silicon auto doping into the nitrogen site, grown on silicon substrate. The source/drain and gate metals were formed by aluminum and gold, respectively. PECVD SiO2 was used as a gate dielectric. The fabricated devices exhibited threshold voltage of 1.65 V, and maximum transconductance of 1.6 mS/mm at VDS=5 V. The normalized on-current was 3 mA/mm and the off-current was as low as 3×10-9 A/mm.

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U2 - 10.1109/EDSSC.2005.1635396

DO - 10.1109/EDSSC.2005.1635396

M3 - Conference contribution

AN - SCOPUS:43549116391

SN - 0780393392

SN - 9780780393394

T3 - 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

SP - 791

EP - 794

BT - 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

Y2 - 19 December 2005 through 21 December 2005

ER -

Lee HB, Cho HI, Back KH, An HS, Lee JH, Hahm SH. Normally-off GaN n-MOSFET with schottky-barrier source and drain on a p-GaN on silicon substrate. In 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. Institute of Electrical and Electronics Engineers Inc. 2005. p. 791-794. 1635396. (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC). doi: 10.1109/EDSSC.2005.1635396

Normally-off GaN n-MOSFET with schottky-barrier source and drain on a p-GaN on silicon substrate

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