N+ shallow junction formation using plasma doping and rapid thermal annealing

Seong Ho Kong; Ho Jung; Jeong Eun Kim; Seung Woo Do; Jae Geun Oh; Sun Hwan Hwang; Jin Gu Lee; Ja Choon Ku; Jong Ho Lee; Yong Hyun Lee

doi:10.1109/ISDRS.2007.4422355

N⁺ shallow junction formation using plasma doping and rapid thermal annealing

Seong Ho Kong, Ho Jung, Jeong Eun Kim, Seung Woo Do, Jae Geun Oh, Sun Hwan Hwang, Jin Gu Lee, Ja Choon Ku, Jong Ho Lee, Yong Hyun Lee

School of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	2007 International Semiconductor Device Research Symposium, ISDRS
DOIs	https://doi.org/10.1109/ISDRS.2007.4422355
State	Published - 2007
Event	2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States Duration: 12 Dec 2007 → 14 Dec 2007

Publication series

Name	2007 International Semiconductor Device Research Symposium, ISDRS

Conference

Conference	2007 International Semiconductor Device Research Symposium, ISDRS
Country/Territory	United States
City	College Park, MD
Period	12/12/07 → 14/12/07

Access to Document

10.1109/ISDRS.2007.4422355

Cite this

Kong, S. H., Jung, H., Kim, J. E., Do, S. W., Oh, J. G., Hwang, S. H., Lee, J. G., Ku, J. C., Lee, J. H., & Lee, Y. H. (2007). N⁺ shallow junction formation using plasma doping and rapid thermal annealing. In 2007 International Semiconductor Device Research Symposium, ISDRS Article 4422355 (2007 International Semiconductor Device Research Symposium, ISDRS). https://doi.org/10.1109/ISDRS.2007.4422355

@inproceedings{0474f0d959de487c81e73caeadc0ec78,

title = "N+ shallow junction formation using plasma doping and rapid thermal annealing",

author = "Kong, \{Seong Ho\} and Ho Jung and Kim, \{Jeong Eun\} and Do, \{Seung Woo\} and Oh, \{Jae Geun\} and Hwang, \{Sun Hwan\} and Lee, \{Jin Gu\} and Ku, \{Ja Choon\} and Lee, \{Jong Ho\} and Lee, \{Yong Hyun\}",

year = "2007",

doi = "10.1109/ISDRS.2007.4422355",

language = "English",

isbn = "1424418917",

series = "2007 International Semiconductor Device Research Symposium, ISDRS",

booktitle = "2007 International Semiconductor Device Research Symposium, ISDRS",

note = "2007 International Semiconductor Device Research Symposium, ISDRS ; Conference date: 12-12-2007 Through 14-12-2007",

}

Kong, SH, Jung, H, Kim, JE, Do, SW, Oh, JG, Hwang, SH, Lee, JG, Ku, JC, Lee, JH & Lee, YH 2007, N⁺ shallow junction formation using plasma doping and rapid thermal annealing. in 2007 International Semiconductor Device Research Symposium, ISDRS., 4422355, 2007 International Semiconductor Device Research Symposium, ISDRS, 2007 International Semiconductor Device Research Symposium, ISDRS, College Park, MD, United States, 12/12/07. https://doi.org/10.1109/ISDRS.2007.4422355

N⁺ shallow junction formation using plasma doping and rapid thermal annealing. / Kong, Seong Ho; Jung, Ho; Kim, Jeong Eun et al.
2007 International Semiconductor Device Research Symposium, ISDRS. 2007. 4422355 (2007 International Semiconductor Device Research Symposium, ISDRS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - N+ shallow junction formation using plasma doping and rapid thermal annealing

AU - Kong, Seong Ho

AU - Jung, Ho

AU - Kim, Jeong Eun

AU - Do, Seung Woo

AU - Oh, Jae Geun

AU - Hwang, Sun Hwan

AU - Lee, Jin Gu

AU - Ku, Ja Choon

AU - Lee, Jong Ho

AU - Lee, Yong Hyun

PY - 2007

Y1 - 2007

UR - https://www.scopus.com/pages/publications/44949176163

U2 - 10.1109/ISDRS.2007.4422355

DO - 10.1109/ISDRS.2007.4422355

M3 - Conference contribution

AN - SCOPUS:44949176163

SN - 1424418917

SN - 9781424418916

T3 - 2007 International Semiconductor Device Research Symposium, ISDRS

BT - 2007 International Semiconductor Device Research Symposium, ISDRS

T2 - 2007 International Semiconductor Device Research Symposium, ISDRS

Y2 - 12 December 2007 through 14 December 2007