Numerical Design of Carrier Transporting Layer in Top-Gate InGaZnO Thin-Film Transistors for Controlling Potential Energy

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	3847
Journal	Journal of Nanoscience and Nanotechnology
Volume	21
DOIs	https://doi.org/10.1166/jnn.2021.19248
State	Published - 2021

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@article{80196f86cc254b9b9eda0c3cdcfca6fc,

title = "Numerical Design of Carrier Transporting Layer in Top-Gate InGaZnO Thin-Film Transistors for Controlling Potential Energy",

author = "Kang, \{In Man\}",

year = "2021",

doi = "10.1166/jnn.2021.19248",

language = "English",

volume = "21",

pages = "3847",

journal = "Journal of Nanoscience and Nanotechnology",

issn = "1533-4880",

publisher = "American Scientific Publishers",

}

TY - JOUR

T1 - Numerical Design of Carrier Transporting Layer in Top-Gate InGaZnO Thin-Film Transistors for Controlling Potential Energy

AU - Kang, In Man

PY - 2021

Y1 - 2021

U2 - 10.1166/jnn.2021.19248

DO - 10.1166/jnn.2021.19248

M3 - Article

SN - 1533-4880

VL - 21

SP - 3847

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

ER -