Numerical study on off-current features in an organic transistor by controlling electrode-overlap area

Dong Seok Song; Hyeok Kim; Premkumar Vincent; Joonku Hahn; Jaehoon Park; Jin Hyuk Bae

doi:10.1080/15421406.2016.1200357

Numerical study on off-current features in an organic transistor by controlling electrode-overlap area

Dong Seok Song, Hyeok Kim, Premkumar Vincent, Joonku Hahn, Jaehoon Park, Jin Hyuk Bae

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We investigate the effect of the source/drain-to-gate electrode overlap area on the off-current features in organic thin-film transistors (OTFTs). For the numerical simulation, we used 2-D Atlas, a device simulator based on a two-dimensional Technology Computer Aided Design (TCAD) software tool provided by Silvaco. Both channel and overlap lengths are varied from 1 μm to 1000 μm. The off-current decreases with increasing channel length, whereas variations in the overlap area show a negligible effect on both on- and off-state currents.

Original language	English
Pages (from-to)	67-73
Number of pages	7
Journal	Molecular Crystals and Liquid Crystals
Volume	635
Issue number	1
DOIs	https://doi.org/10.1080/15421406.2016.1200357
State	Published - 12 Aug 2016

Keywords

Electrode overlap
Numerical Study
Off-state features
Thin-film transistor

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10.1080/15421406.2016.1200357

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abstract = "We investigate the effect of the source/drain-to-gate electrode overlap area on the off-current features in organic thin-film transistors (OTFTs). For the numerical simulation, we used 2-D Atlas, a device simulator based on a two-dimensional Technology Computer Aided Design (TCAD) software tool provided by Silvaco. Both channel and overlap lengths are varied from 1 μm to 1000 μm. The off-current decreases with increasing channel length, whereas variations in the overlap area show a negligible effect on both on- and off-state currents.",

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AU - Vincent, Premkumar

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AU - Park, Jaehoon

AU - Bae, Jin Hyuk

PY - 2016/8/12

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AB - We investigate the effect of the source/drain-to-gate electrode overlap area on the off-current features in organic thin-film transistors (OTFTs). For the numerical simulation, we used 2-D Atlas, a device simulator based on a two-dimensional Technology Computer Aided Design (TCAD) software tool provided by Silvaco. Both channel and overlap lengths are varied from 1 μm to 1000 μm. The off-current decreases with increasing channel length, whereas variations in the overlap area show a negligible effect on both on- and off-state currents.

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KW - Numerical Study

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Numerical study on off-current features in an organic transistor by controlling electrode-overlap area

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Keywords

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