Abstract
To explain the address discharge fail at a high temperature, the wall charge leakage phenomenon during an address-period was investigated relative to the number of applied address and sustain pulses under variable panel temperatures based on the Vt closedcurve analysis. The wall charge leakages were increased with an increase in the number of the applied address and sustain pulse, and this tendency are intensified as the panel temperature increased. The wall voltage leakage causes a weakening of the address discharge, thereby resulting in increase in the address delay. Furthermore, the effects of ITO width on the wall charge leakage during an address-period were also examined under variable panel temperatures. It was observed that the wall voltage leakages were increased with an increase in the ITO width.
Original language | English |
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Pages | 2097-2100 |
Number of pages | 4 |
State | Published - 2007 |
Event | 14th International Display Workshops, IDW '07 - Sapporo, Japan Duration: 5 Dec 2007 → 5 Dec 2007 |
Conference
Conference | 14th International Display Workshops, IDW '07 |
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Country/Territory | Japan |
City | Sapporo |
Period | 5/12/07 → 5/12/07 |