On the universality of drain-induced-barrier-lowering in field-effect transistors

Su Min Choi, Hyeon Bhin Jo, Do Young Yun, Jun Gyu Kim, Wan Soo Park, Ji Min Baek, In Geun Lee, Jang Kyoo Shin, Hyuk Min Kwon, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Jae Hak Lee, Dae Hyun Kim

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this paper, we revisit on the extraction of drain-induced-barrier-lowering (DIBL) in various types of field-effect transistors (FETs) with Lg ranging from several mum to sub-30 nm and from planar to gate-all-around (GAA) architectures, aiming to unify the extraction methodology of DIBL. In doing so, we found that the values of DIBL extracted in the conventional manner were strongly dependent on the choice of VDS in the linear regime, especially for V-{DS} lt 4 times(kT/q). To physically understand this, we constructed a first-order model for the threshold voltage (V-{T}), which explains the abnormal positive shift of VT with VDS for V-{DS} lt 4 times(kT/q). This additional positive shift of VT in the linear regime resulted in overestimation of DIBL. In an effort to unify the extraction procedure of DIBL, we herein propose first how to accurately extract DIBL and then how to correct reported values of DIBL extracted in the conventional manner. Finally, we highlighted the importance of accurate extraction of DIBL from the viewpoint of its impact on virtual-source modeling, universal relationship between DIBL and aspect ratio, and projection of maximum oscillation frequency ( gamma-{ max}).

Original languageEnglish
Title of host publication2022 International Electron Devices Meeting, IEDM 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages831-834
Number of pages4
ISBN (Electronic)9781665489591
DOIs
StatePublished - 2022
Event2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, United States
Duration: 3 Dec 20227 Dec 2022

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2022-December
ISSN (Print)0163-1918

Conference

Conference2022 International Electron Devices Meeting, IEDM 2022
Country/TerritoryUnited States
CitySan Francisco
Period3/12/227/12/22

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