@inproceedings{f2fa793c95754f8ba70f8614734014b1,
title = "On the universality of drain-induced-barrier-lowering in field-effect transistors",
abstract = "In this paper, we revisit on the extraction of drain-induced-barrier-lowering (DIBL) in various types of field-effect transistors (FETs) with Lg ranging from several mum to sub-30 nm and from planar to gate-all-around (GAA) architectures, aiming to unify the extraction methodology of DIBL. In doing so, we found that the values of DIBL extracted in the conventional manner were strongly dependent on the choice of VDS in the linear regime, especially for V-{DS} lt 4 times(kT/q). To physically understand this, we constructed a first-order model for the threshold voltage (V-{T}), which explains the abnormal positive shift of VT with VDS for V-{DS} lt 4 times(kT/q). This additional positive shift of VT in the linear regime resulted in overestimation of DIBL. In an effort to unify the extraction procedure of DIBL, we herein propose first how to accurately extract DIBL and then how to correct reported values of DIBL extracted in the conventional manner. Finally, we highlighted the importance of accurate extraction of DIBL from the viewpoint of its impact on virtual-source modeling, universal relationship between DIBL and aspect ratio, and projection of maximum oscillation frequency ( gamma-{ max}).",
author = "Choi, {Su Min} and Jo, {Hyeon Bhin} and Yun, {Do Young} and Kim, {Jun Gyu} and Park, {Wan Soo} and Baek, {Ji Min} and Lee, {In Geun} and Shin, {Jang Kyoo} and Kwon, {Hyuk Min} and Takuya Tsutsumi and Hiroki Sugiyama and Hideaki Matsuzaki and Lee, {Jae Hak} and Kim, {Dae Hyun}",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 International Electron Devices Meeting, IEDM 2022 ; Conference date: 03-12-2022 Through 07-12-2022",
year = "2022",
doi = "10.1109/IEDM45625.2022.10019358",
language = "English",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "831--834",
booktitle = "2022 International Electron Devices Meeting, IEDM 2022",
address = "United States",
}