One material, multiple faces - Nanostructured bismuth

Hongsik Park, Dongil Han, Jin Ho Kim, Chih Hsun Hsu, Hyunjung Shin, Jimmy Xu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

One-dimensional (1D) bismuth and bismuth sulfide nanowires have been successfully fabricated. The diameter of bismuth nanowires was precisely controlled from 66 to 25 nm using atomic layer deposition (ALD) and IR absorption characteristics were investigated. Bismuth sulfide (Bi 2S3) nanowires were synthesized by biomolecule-assisted synthesis, which resulted in high crystallinity and good uniformity, with diameters of (50±10) nm and lengths of (1.9±0.2) μm. Their morphology was controlled by changing the sulfur sources. To assess their electrical properties, we fabricated nanowire transistors with a back-gate structure. The as-grown nanowires are found to be n-type semiconductors and the on-off ratio of the transistors is about 102 with a silicon dioxide layer of 50 nm thickness as the gate insulator.

Original languageEnglish
Title of host publication1st International Symposium on Semiconductor and Plasmonics-Active Nanostructures for Photonic Devices and Systems
PublisherElectrochemical Society Inc.
Pages25-33
Number of pages9
Edition11
ISBN (Electronic)9781566777483
ISBN (Print)9781566777483
DOIs
StatePublished - 2009

Publication series

NameECS Transactions
Number11
Volume25
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

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