Operation voltage control in complementary resistive switches using heterodevice

Daeseok Lee; Jubong Park; Seungjae Jung; Godeuni Choi; Joonmyoung Lee; Seonghyun Kim; Jiyong Woo; Manzar Siddik; Eujun Cha; Hyunsang Hwang

doi:10.1109/LED.2012.2186113

Operation voltage control in complementary resistive switches using heterodevice

Daeseok Lee
, Jubong Park
, Seungjae Jung
, Godeuni Choi
, Joonmyoung Lee
, Seonghyun Kim
, Jiyong Woo
, Manzar Siddik
, Eujun Cha
, Hyunsang Hwang

School of Electronics Engineering

Gwangju Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

For the high-density memory application of resistive random access memory (ReRAM), we study the complementary resistive switch (CRS) behavior of a HfO _x-based ReRAM with a TiO _x-based ReRAM. To control the operation voltages of the CRS device, we used ReRAMs having asymmetric set and reset voltages. Consequently, we achieved a wider voltage window for the read process, high switch speed, high reliability, and more than ten times readout margin from the heterodevice CRS.

Original language	English
Article number	6165638
Pages (from-to)	600-602
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	4
DOIs	https://doi.org/10.1109/LED.2012.2186113
State	Published - Apr 2012

Keywords

Complementary resistive switches (CRSs)
cross-point array
nonvolatile memory
resistive memory
RRAM

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10.1109/LED.2012.2186113

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@article{efe7444aa590462090ffd594069deba6,

title = "Operation voltage control in complementary resistive switches using heterodevice",

abstract = "For the high-density memory application of resistive random access memory (ReRAM), we study the complementary resistive switch (CRS) behavior of a HfO x-based ReRAM with a TiO x-based ReRAM. To control the operation voltages of the CRS device, we used ReRAMs having asymmetric set and reset voltages. Consequently, we achieved a wider voltage window for the read process, high switch speed, high reliability, and more than ten times readout margin from the heterodevice CRS.",

keywords = "Complementary resistive switches (CRSs), cross-point array, nonvolatile memory, resistive memory, RRAM",

author = "Daeseok Lee and Jubong Park and Seungjae Jung and Godeuni Choi and Joonmyoung Lee and Seonghyun Kim and Jiyong Woo and Manzar Siddik and Eujun Cha and Hyunsang Hwang",

year = "2012",

month = apr,

doi = "10.1109/LED.2012.2186113",

language = "English",

volume = "33",

pages = "600--602",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Operation voltage control in complementary resistive switches using heterodevice

AU - Lee, Daeseok

AU - Park, Jubong

AU - Jung, Seungjae

AU - Choi, Godeuni

AU - Lee, Joonmyoung

AU - Kim, Seonghyun

AU - Woo, Jiyong

AU - Siddik, Manzar

AU - Cha, Eujun

AU - Hwang, Hyunsang

PY - 2012/4

Y1 - 2012/4

N2 - For the high-density memory application of resistive random access memory (ReRAM), we study the complementary resistive switch (CRS) behavior of a HfO x-based ReRAM with a TiO x-based ReRAM. To control the operation voltages of the CRS device, we used ReRAMs having asymmetric set and reset voltages. Consequently, we achieved a wider voltage window for the read process, high switch speed, high reliability, and more than ten times readout margin from the heterodevice CRS.

AB - For the high-density memory application of resistive random access memory (ReRAM), we study the complementary resistive switch (CRS) behavior of a HfO x-based ReRAM with a TiO x-based ReRAM. To control the operation voltages of the CRS device, we used ReRAMs having asymmetric set and reset voltages. Consequently, we achieved a wider voltage window for the read process, high switch speed, high reliability, and more than ten times readout margin from the heterodevice CRS.

KW - Complementary resistive switches (CRSs)

KW - cross-point array

KW - nonvolatile memory

KW - resistive memory

KW - RRAM

UR - https://www.scopus.com/pages/publications/84862828865

U2 - 10.1109/LED.2012.2186113

DO - 10.1109/LED.2012.2186113

M3 - Article

AN - SCOPUS:84862828865

SN - 0741-3106

VL - 33

SP - 600

EP - 602

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 4

M1 - 6165638

ER -

Operation voltage control in complementary resistive switches using heterodevice

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Keywords

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