Optical and electronic properties of bismuth-implanted glasses

M. A. Hughes, Y. Federenko, T. H. Lee, J. Yao, B. Gholipour, R. M. Gwilliam, K. P. Homewood, D. W. Hewak, S. R. Elliott, R. J. Curry

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Photoluminescence (PL) and excitation spectra of Bi melt-doped oxide and chalcogenide glasses are very similar, indicating the same Bi center is present. When implanted with Bi, chalcogenide, phosphate and silica glasses, and BaF2 crystals, all display characteristically different PL spectra to when Bi is incorporated by melt-doping. This indicates that ion implantation is able to generate Bi centers which are not present in samples whose dopants are introduced during melting. Bi-related PL bands have been observed in glasses with very similar compositions to those in which carrier-type reversal has been observed, indicating that these phenomena are related to the same Bi centers, which we suggest are interstitial Bi2+ and Bi clusters.

Original languageEnglish
Title of host publicationOptical Components and Materials XI
PublisherSPIE
ISBN (Print)9780819498953
DOIs
StatePublished - 2014
EventOptical Components and Materials XI - San Francisco, CA, United States
Duration: 3 Feb 20145 Feb 2014

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8982
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceOptical Components and Materials XI
Country/TerritoryUnited States
CitySan Francisco, CA
Period3/02/145/02/14

Keywords

  • Bismuth
  • Chalcogenide
  • Implantation
  • Photoluminescence

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