Optical band gap modulation by Mg-doping in In 2O 3(ZnO) 3 ceramics

Hwa Jong Lee; Jung A. Lee; Joon Hyung Lee; Young Woo Heo; Jeong Joo Kim; Seong Kee Park; Jungshik Lim

doi:10.1016/j.ceramint.2012.05.058

Optical band gap modulation by Mg-doping in In ₂O ₃(ZnO) ₃ ceramics

Hwa Jong Lee, Jung A. Lee, Joon Hyung Lee, Young Woo Heo, Jeong Joo Kim, Seong Kee Park, Jungshik Lim

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

In this study, different amounts of Mg were doped in In ₂O ₃(Zn _1-xMg _xO) ₃ and their thin films were grown by using the RF magnetron sputtering method. The optical and electrical characteristics of the films revealed that the lattice constant decreased while the optical band gap increased as the Mg content increased, showing an inverse proportional relationship with each other. Therefore, it was found that Mg doping in indium zinc oxide (IZO) is also effective for band gap modulation as it was reported in a Mg-doped ZnO system. When IZO thin films were grown in a more reducing ambient, the carrier concentration increased which resulted in the increase of band gap energy. This was explained due to the Burstein-Moss effect.

Original language	English
Pages (from-to)	6693-6697
Number of pages	5
Journal	Ceramics International
Volume	38
Issue number	8
DOIs	https://doi.org/10.1016/j.ceramint.2012.05.058
State	Published - Dec 2012

Keywords

Band gap
Doping
Indium zinc oxide
Transparent conducting oxide

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10.1016/j.ceramint.2012.05.058

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title = "Optical band gap modulation by Mg-doping in In 2O 3(ZnO) 3 ceramics",

abstract = "In this study, different amounts of Mg were doped in In 2O 3(Zn 1-xMg xO) 3 and their thin films were grown by using the RF magnetron sputtering method. The optical and electrical characteristics of the films revealed that the lattice constant decreased while the optical band gap increased as the Mg content increased, showing an inverse proportional relationship with each other. Therefore, it was found that Mg doping in indium zinc oxide (IZO) is also effective for band gap modulation as it was reported in a Mg-doped ZnO system. When IZO thin films were grown in a more reducing ambient, the carrier concentration increased which resulted in the increase of band gap energy. This was explained due to the Burstein-Moss effect.",

keywords = "Band gap, Doping, Indium zinc oxide, Transparent conducting oxide",

author = "Lee, {Hwa Jong} and Lee, {Jung A.} and Lee, {Joon Hyung} and Heo, {Young Woo} and Kim, {Jeong Joo} and Park, {Seong Kee} and Jungshik Lim",

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language = "English",

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journal = "Ceramics International",

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TY - JOUR

T1 - Optical band gap modulation by Mg-doping in In 2O 3(ZnO) 3 ceramics

AU - Lee, Hwa Jong

AU - Lee, Jung A.

AU - Lee, Joon Hyung

AU - Heo, Young Woo

AU - Kim, Jeong Joo

AU - Park, Seong Kee

AU - Lim, Jungshik

PY - 2012/12

Y1 - 2012/12

N2 - In this study, different amounts of Mg were doped in In 2O 3(Zn 1-xMg xO) 3 and their thin films were grown by using the RF magnetron sputtering method. The optical and electrical characteristics of the films revealed that the lattice constant decreased while the optical band gap increased as the Mg content increased, showing an inverse proportional relationship with each other. Therefore, it was found that Mg doping in indium zinc oxide (IZO) is also effective for band gap modulation as it was reported in a Mg-doped ZnO system. When IZO thin films were grown in a more reducing ambient, the carrier concentration increased which resulted in the increase of band gap energy. This was explained due to the Burstein-Moss effect.

AB - In this study, different amounts of Mg were doped in In 2O 3(Zn 1-xMg xO) 3 and their thin films were grown by using the RF magnetron sputtering method. The optical and electrical characteristics of the films revealed that the lattice constant decreased while the optical band gap increased as the Mg content increased, showing an inverse proportional relationship with each other. Therefore, it was found that Mg doping in indium zinc oxide (IZO) is also effective for band gap modulation as it was reported in a Mg-doped ZnO system. When IZO thin films were grown in a more reducing ambient, the carrier concentration increased which resulted in the increase of band gap energy. This was explained due to the Burstein-Moss effect.

KW - Band gap

KW - Doping

KW - Indium zinc oxide

KW - Transparent conducting oxide

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DO - 10.1016/j.ceramint.2012.05.058

M3 - Article

AN - SCOPUS:84865711105

SN - 0272-8842

VL - 38

SP - 6693

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JO - Ceramics International

JF - Ceramics International

IS - 8

ER -

Optical band gap modulation by Mg-doping in In ₂O ₃(ZnO) ₃ ceramics

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Keywords

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