Optical behavior of Pt/AlGaN Schottky-type UV photodetector

Young Ro Jung; Jung Kyu Kim; Jae Hoon Lee; Young Hyun Lee; Myoung Bok Lee; Jung Hee Lee; Sung Ho Hahm

doi:10.1002/pssc.200390126

Optical behavior of Pt/AlGaN Schottky-type UV photodetector

Young Ro Jung, Jung Kyu Kim, Jae Hoon Lee, Young Hyun Lee, Myoung Bok Lee, Jung Hee Lee, Sung Ho Hahm

School of Electronics Engineering

Kyungpook National University

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

A Schottky-type solar-blind photodetector was designed and fabricated by employing an unintentionally doped Al_0.33Ga_0.67N layer, grown on a sapphire substrate using metalorganic chemical vapor deposition. A low-temperature grown AlGaN interlayer was also inserted between the GaN and AlGaN active layer and was shown to play an important role in decreasing the thermal and lattice mismatch-induced crack effect in the active AlGaN layer. The Schottky-type photodetectors fabricated on the crack-free AlGaN layer exhibited excellent electrical characteristics and UV detecting properties. The Pt/AlGaN Schottky photodiode had a dark current of 509 nA/cm² at -5 V, cut-off wavelength of 310 nm, and peak responsivity of 0.15 A/W at 280 nm. Also, the UV/visible extinction ratio was 1.5 × 10⁴ in the band edge, which is one of the highest values for AlGaN photodetectors.

Original language	English
Pages (from-to)	99-102
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Issue number	1
DOIs	https://doi.org/10.1002/pssc.200390126
State	Published - 1 Dec 2002
Event	2nd International Workshop on Nitride Semiconductors, IWN 2002 - Aachen, Germany Duration: 22 Jul 2002 → 25 Jul 2002

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@article{2dd245a8115446dd8570bd72aab46ea4,

title = "Optical behavior of Pt/AlGaN Schottky-type UV photodetector",

abstract = "A Schottky-type solar-blind photodetector was designed and fabricated by employing an unintentionally doped Al0.33Ga0.67N layer, grown on a sapphire substrate using metalorganic chemical vapor deposition. A low-temperature grown AlGaN interlayer was also inserted between the GaN and AlGaN active layer and was shown to play an important role in decreasing the thermal and lattice mismatch-induced crack effect in the active AlGaN layer. The Schottky-type photodetectors fabricated on the crack-free AlGaN layer exhibited excellent electrical characteristics and UV detecting properties. The Pt/AlGaN Schottky photodiode had a dark current of 509 nA/cm2 at -5 V, cut-off wavelength of 310 nm, and peak responsivity of 0.15 A/W at 280 nm. Also, the UV/visible extinction ratio was 1.5 × 104 in the band edge, which is one of the highest values for AlGaN photodetectors.",

author = "Jung, {Young Ro} and Kim, {Jung Kyu} and Lee, {Jae Hoon} and Lee, {Young Hyun} and Lee, {Myoung Bok} and Lee, {Jung Hee} and Hahm, {Sung Ho}",

year = "2002",

month = dec,

day = "1",

doi = "10.1002/pssc.200390126",

language = "English",

pages = "99--102",

journal = "Physica Status Solidi C: Conferences",

issn = "1610-1634",

publisher = "Wiley-VCH Verlag",

number = "1",

note = "2nd International Workshop on Nitride Semiconductors, IWN 2002 ; Conference date: 22-07-2002 Through 25-07-2002",

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TY - JOUR

T1 - Optical behavior of Pt/AlGaN Schottky-type UV photodetector

AU - Jung, Young Ro

AU - Kim, Jung Kyu

AU - Lee, Jae Hoon

AU - Lee, Young Hyun

AU - Lee, Myoung Bok

AU - Lee, Jung Hee

AU - Hahm, Sung Ho

PY - 2002/12/1

Y1 - 2002/12/1

N2 - A Schottky-type solar-blind photodetector was designed and fabricated by employing an unintentionally doped Al0.33Ga0.67N layer, grown on a sapphire substrate using metalorganic chemical vapor deposition. A low-temperature grown AlGaN interlayer was also inserted between the GaN and AlGaN active layer and was shown to play an important role in decreasing the thermal and lattice mismatch-induced crack effect in the active AlGaN layer. The Schottky-type photodetectors fabricated on the crack-free AlGaN layer exhibited excellent electrical characteristics and UV detecting properties. The Pt/AlGaN Schottky photodiode had a dark current of 509 nA/cm2 at -5 V, cut-off wavelength of 310 nm, and peak responsivity of 0.15 A/W at 280 nm. Also, the UV/visible extinction ratio was 1.5 × 104 in the band edge, which is one of the highest values for AlGaN photodetectors.

AB - A Schottky-type solar-blind photodetector was designed and fabricated by employing an unintentionally doped Al0.33Ga0.67N layer, grown on a sapphire substrate using metalorganic chemical vapor deposition. A low-temperature grown AlGaN interlayer was also inserted between the GaN and AlGaN active layer and was shown to play an important role in decreasing the thermal and lattice mismatch-induced crack effect in the active AlGaN layer. The Schottky-type photodetectors fabricated on the crack-free AlGaN layer exhibited excellent electrical characteristics and UV detecting properties. The Pt/AlGaN Schottky photodiode had a dark current of 509 nA/cm2 at -5 V, cut-off wavelength of 310 nm, and peak responsivity of 0.15 A/W at 280 nm. Also, the UV/visible extinction ratio was 1.5 × 104 in the band edge, which is one of the highest values for AlGaN photodetectors.

UR - http://www.scopus.com/inward/record.url?scp=84875084723&partnerID=8YFLogxK

U2 - 10.1002/pssc.200390126

DO - 10.1002/pssc.200390126

M3 - Conference article

AN - SCOPUS:84875084723

SN - 1610-1634

SP - 99

EP - 102

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 1

T2 - 2nd International Workshop on Nitride Semiconductors, IWN 2002

Y2 - 22 July 2002 through 25 July 2002

ER -

Optical behavior of Pt/AlGaN Schottky-type UV photodetector

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