Optical properties of yellow light-emitting diodes grown on semipolar (1 12̄2) bulk GaN substrates

Hitoshi Sato; Roy B. Chung; Hirohiko Hirasawa; Natalie Fellows; Hisashi Masui; Feng Wu; Makoto Saito; Kenji Fujito; James S. Speck; Steven P. Denbaars; Shuji Nakamura

doi:10.1063/1.2938062

Optical properties of yellow light-emitting diodes grown on semipolar (1 12̄2) bulk GaN substrates

Hitoshi Sato, Roy B. Chung, Hirohiko Hirasawa, Natalie Fellows, Hisashi Masui, Feng Wu, Makoto Saito, Kenji Fujito, James S. Speck, Steven P. Denbaars, Shuji Nakamura

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173 Scopus citations

Abstract

We demonstrate high power yellow InGaN single-quantum-well light-emitting diodes (LEDs) with a peak emission wavelength of 562.7 nm grown on low extended defect density semipolar (1 12̄2) bulk GaN substrates by metal organic chemical vapor deposition. The output power and external quantum efficiency at drive currents of 20 and 200 mA under pulsed operation (10% duty cycle) were 5.9 mW, 13.4% and 29.2 mW, 6.4%, respectively. It was observed that the temperature dependence of the output power of InGaN LEDs was significantly smaller than that of AlInGaP LEDs.

Original language	English
Article number	221110
Journal	Applied Physics Letters
Volume	92
Issue number	22
DOIs	https://doi.org/10.1063/1.2938062
State	Published - 2008

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@article{44fb79667b5b46e78f0db330e24c7aeb,

title = "Optical properties of yellow light-emitting diodes grown on semipolar (1 1{\=2}2) bulk GaN substrates",

abstract = "We demonstrate high power yellow InGaN single-quantum-well light-emitting diodes (LEDs) with a peak emission wavelength of 562.7 nm grown on low extended defect density semipolar (1 1{\=2}2) bulk GaN substrates by metal organic chemical vapor deposition. The output power and external quantum efficiency at drive currents of 20 and 200 mA under pulsed operation (10% duty cycle) were 5.9 mW, 13.4% and 29.2 mW, 6.4%, respectively. It was observed that the temperature dependence of the output power of InGaN LEDs was significantly smaller than that of AlInGaP LEDs.",

author = "Hitoshi Sato and Chung, {Roy B.} and Hirohiko Hirasawa and Natalie Fellows and Hisashi Masui and Feng Wu and Makoto Saito and Kenji Fujito and Speck, {James S.} and Denbaars, {Steven P.} and Shuji Nakamura",

year = "2008",

doi = "10.1063/1.2938062",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "22",

}

TY - JOUR

T1 - Optical properties of yellow light-emitting diodes grown on semipolar (1 12̄2) bulk GaN substrates

AU - Sato, Hitoshi

AU - Chung, Roy B.

AU - Hirasawa, Hirohiko

AU - Fellows, Natalie

AU - Masui, Hisashi

AU - Wu, Feng

AU - Saito, Makoto

AU - Fujito, Kenji

AU - Speck, James S.

AU - Denbaars, Steven P.

AU - Nakamura, Shuji

PY - 2008

Y1 - 2008

N2 - We demonstrate high power yellow InGaN single-quantum-well light-emitting diodes (LEDs) with a peak emission wavelength of 562.7 nm grown on low extended defect density semipolar (1 12̄2) bulk GaN substrates by metal organic chemical vapor deposition. The output power and external quantum efficiency at drive currents of 20 and 200 mA under pulsed operation (10% duty cycle) were 5.9 mW, 13.4% and 29.2 mW, 6.4%, respectively. It was observed that the temperature dependence of the output power of InGaN LEDs was significantly smaller than that of AlInGaP LEDs.

AB - We demonstrate high power yellow InGaN single-quantum-well light-emitting diodes (LEDs) with a peak emission wavelength of 562.7 nm grown on low extended defect density semipolar (1 12̄2) bulk GaN substrates by metal organic chemical vapor deposition. The output power and external quantum efficiency at drive currents of 20 and 200 mA under pulsed operation (10% duty cycle) were 5.9 mW, 13.4% and 29.2 mW, 6.4%, respectively. It was observed that the temperature dependence of the output power of InGaN LEDs was significantly smaller than that of AlInGaP LEDs.

UR - http://www.scopus.com/inward/record.url?scp=44849139451&partnerID=8YFLogxK

U2 - 10.1063/1.2938062

DO - 10.1063/1.2938062

M3 - Article

AN - SCOPUS:44849139451

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 221110

ER -

Optical properties of yellow light-emitting diodes grown on semipolar (1 12̄2) bulk GaN substrates

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