Abstract
Active-Matrix Cathodes (AMC) with a-Si TFT and field emitter arrays have been studied. The two types of AMC were fabricated by integration of a-Si TFT with Mo-tip based triode emitter and carbon nanotube based diode emitter. The emission behavior of each AMC on glass substrate was well controlled by the gate bias of TFT. The requirements for the control TFT are varied according to the properties of field emitter array. The optimum characteristics of control TFT for triode- and diode-type AMC are discussed.
Original language | English |
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Pages (from-to) | 1165-1167 |
Number of pages | 3 |
Journal | SID Conference Record of the International Display Research Conference |
State | Published - 2001 |
Event | Asia Display/IDW 2001 - Nagoya, Japan Duration: 16 Oct 2002 → 19 Oct 2002 |