Optimization of Ti/Al/Pt/Au ohmic contact and RuO2-based Schottky contact in AlGaN/GaN HFET for high power and high temperature operation

Jae Seung Lee; Jong Wook Kim; Jae Hak Lee; Jin Ho Shin; Sung Ho Hahm; Yong Hyun Lee; Jung Hee Lee; Moo Whan Shim; Chang Seok Kim; Jae Eung Oh

Optimization of Ti/Al/Pt/Au ohmic contact and RuO₂-based Schottky contact in AlGaN/GaN HFET for high power and high temperature operation

Jae Seung Lee, Jong Wook Kim, Jae Hak Lee, Jin Ho Shin, Sung Ho Hahm, Yong Hyun Lee, Jung Hee Lee, Moo Whan Shim, Chang Seok Kim, Jae Eung Oh

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The electrical and structural characteristics of Ti/Al/Pt/Au ohmic contact and RuO₂-based Schottky contact, wore investigated for the fabrication of high power and high temperature AlGaN/GaN HFETs. Ti/Al/Pt/Au ohmic contact has been formed with various conditions, such as, annealing temperature, annealing time, and Ti/Al ratio. Ti/Al/Pt/Au with Ti/Al ratio of 0.25 annealed at 825 °C for 1 minute under nitrogen ambient showed 1×10^-6 W cm² with smooth metal surface. RuO₂-based Schottky contact exhibited higher breakdown and lower leakage current than those obtained from Ni or Pt Schottky contact. Excellent thermal stability and reliable device operation is expected from the thermally annealed RaO₂-based Schottky contact.

Original language	English
Pages (from-to)	S385-S388
Journal	Journal of the Korean Physical Society
Volume	39
Issue number	SUPPL. Part 1
State	Published - Dec 2001

Cite this

@article{2d1e70e1ec604a7e99f65716dd632aa1,

title = "Optimization of Ti/Al/Pt/Au ohmic contact and RuO2-based Schottky contact in AlGaN/GaN HFET for high power and high temperature operation",

abstract = "The electrical and structural characteristics of Ti/Al/Pt/Au ohmic contact and RuO2-based Schottky contact, wore investigated for the fabrication of high power and high temperature AlGaN/GaN HFETs. Ti/Al/Pt/Au ohmic contact has been formed with various conditions, such as, annealing temperature, annealing time, and Ti/Al ratio. Ti/Al/Pt/Au with Ti/Al ratio of 0.25 annealed at 825 °C for 1 minute under nitrogen ambient showed 1×10-6 W cm2 with smooth metal surface. RuO2-based Schottky contact exhibited higher breakdown and lower leakage current than those obtained from Ni or Pt Schottky contact. Excellent thermal stability and reliable device operation is expected from the thermally annealed RaO2-based Schottky contact.",

author = "Lee, {Jae Seung} and Kim, {Jong Wook} and Lee, {Jae Hak} and Shin, {Jin Ho} and Hahm, {Sung Ho} and Lee, {Yong Hyun} and Lee, {Jung Hee} and Shim, {Moo Whan} and Kim, {Chang Seok} and Oh, {Jae Eung}",

year = "2001",

month = dec,

language = "English",

volume = "39",

pages = "S385--S388",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "SUPPL. Part 1",

}

TY - JOUR

T1 - Optimization of Ti/Al/Pt/Au ohmic contact and RuO2-based Schottky contact in AlGaN/GaN HFET for high power and high temperature operation

AU - Lee, Jae Seung

AU - Kim, Jong Wook

AU - Lee, Jae Hak

AU - Shin, Jin Ho

AU - Hahm, Sung Ho

AU - Lee, Yong Hyun

AU - Lee, Jung Hee

AU - Shim, Moo Whan

AU - Kim, Chang Seok

AU - Oh, Jae Eung

PY - 2001/12

Y1 - 2001/12

N2 - The electrical and structural characteristics of Ti/Al/Pt/Au ohmic contact and RuO2-based Schottky contact, wore investigated for the fabrication of high power and high temperature AlGaN/GaN HFETs. Ti/Al/Pt/Au ohmic contact has been formed with various conditions, such as, annealing temperature, annealing time, and Ti/Al ratio. Ti/Al/Pt/Au with Ti/Al ratio of 0.25 annealed at 825 °C for 1 minute under nitrogen ambient showed 1×10-6 W cm2 with smooth metal surface. RuO2-based Schottky contact exhibited higher breakdown and lower leakage current than those obtained from Ni or Pt Schottky contact. Excellent thermal stability and reliable device operation is expected from the thermally annealed RaO2-based Schottky contact.

AB - The electrical and structural characteristics of Ti/Al/Pt/Au ohmic contact and RuO2-based Schottky contact, wore investigated for the fabrication of high power and high temperature AlGaN/GaN HFETs. Ti/Al/Pt/Au ohmic contact has been formed with various conditions, such as, annealing temperature, annealing time, and Ti/Al ratio. Ti/Al/Pt/Au with Ti/Al ratio of 0.25 annealed at 825 °C for 1 minute under nitrogen ambient showed 1×10-6 W cm2 with smooth metal surface. RuO2-based Schottky contact exhibited higher breakdown and lower leakage current than those obtained from Ni or Pt Schottky contact. Excellent thermal stability and reliable device operation is expected from the thermally annealed RaO2-based Schottky contact.

UR - http://www.scopus.com/inward/record.url?scp=0035542133&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0035542133

SN - 0374-4884

VL - 39

SP - S385-S388

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - SUPPL. Part 1

ER -

Optimization of Ti/Al/Pt/Au ohmic contact and RuO₂-based Schottky contact in AlGaN/GaN HFET for high power and high temperature operation

Abstract

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