Optimized design of multi-zone junction termination extension for high voltage power devices (IGBTs)

Bong Hwan Kim; Jin Young Park; Kyung Hee Park; Hoon Kyu Shin; Gwon Je Kim; Sang Mok Chang

doi:10.1166/jnn.2017.14181

Optimized design of multi-zone junction termination extension for high voltage power devices (IGBTs)

Bong Hwan Kim, Jin Young Park, Kyung Hee Park, Hoon Kyu Shin, Gwon Je Kim, Sang Mok Chang

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

In this study, high voltage insulated-gate bipolar transistor (IGBT) devices are experimentally optimized to be used in power propulsion control unit. Various processing conditions such as resistivity of Si wafer, implantation, and geometrical field rings were tested to obtain high breakdown voltage (BV). Optimal design of multi-zone junction termination extension (JTE) with ring fields formed on 160 Ω silicon wafer by only one-step wet etching undoer implant conditions (energy: 120 keV and dosage: 9.0 × 10¹³ cm^-2) is suitable to obtain the highest BV. From technology computer aided design (TCAD) simulation, JTE-IGBT with low fixed oxide charge (QF) derives high BV due to the effect of electric field.

Original language	English
Pages (from-to)	5606-5611
Number of pages	6
Journal	Journal of Nanoscience and Nanotechnology
Volume	17
Issue number	8
DOIs	https://doi.org/10.1166/jnn.2017.14181
State	Published - 2017

Keywords

Breakdown voltage
Electric field
Fixed oxide charge
Insulated-Gate bipolar transistor
Test element group

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10.1166/jnn.2017.14181

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@article{213fb3b94e3d4c8cbf0dd765ba1a71e1,

title = "Optimized design of multi-zone junction termination extension for high voltage power devices (IGBTs)",

abstract = "In this study, high voltage insulated-gate bipolar transistor (IGBT) devices are experimentally optimized to be used in power propulsion control unit. Various processing conditions such as resistivity of Si wafer, implantation, and geometrical field rings were tested to obtain high breakdown voltage (BV). Optimal design of multi-zone junction termination extension (JTE) with ring fields formed on 160 Ω silicon wafer by only one-step wet etching undoer implant conditions (energy: 120 keV and dosage: 9.0 × 1013 cm-2) is suitable to obtain the highest BV. From technology computer aided design (TCAD) simulation, JTE-IGBT with low fixed oxide charge (QF) derives high BV due to the effect of electric field.",

keywords = "Breakdown voltage, Electric field, Fixed oxide charge, Insulated-Gate bipolar transistor, Test element group",

author = "Kim, {Bong Hwan} and Park, {Jin Young} and Park, {Kyung Hee} and Shin, {Hoon Kyu} and Kim, {Gwon Je} and Chang, {Sang Mok}",

year = "2017",

doi = "10.1166/jnn.2017.14181",

language = "English",

volume = "17",

pages = "5606--5611",

journal = "Journal of Nanoscience and Nanotechnology",

issn = "1533-4880",

publisher = "American Scientific Publishers",

number = "8",

}

TY - JOUR

T1 - Optimized design of multi-zone junction termination extension for high voltage power devices (IGBTs)

AU - Kim, Bong Hwan

AU - Park, Jin Young

AU - Park, Kyung Hee

AU - Shin, Hoon Kyu

AU - Kim, Gwon Je

AU - Chang, Sang Mok

PY - 2017

Y1 - 2017

N2 - In this study, high voltage insulated-gate bipolar transistor (IGBT) devices are experimentally optimized to be used in power propulsion control unit. Various processing conditions such as resistivity of Si wafer, implantation, and geometrical field rings were tested to obtain high breakdown voltage (BV). Optimal design of multi-zone junction termination extension (JTE) with ring fields formed on 160 Ω silicon wafer by only one-step wet etching undoer implant conditions (energy: 120 keV and dosage: 9.0 × 1013 cm-2) is suitable to obtain the highest BV. From technology computer aided design (TCAD) simulation, JTE-IGBT with low fixed oxide charge (QF) derives high BV due to the effect of electric field.

AB - In this study, high voltage insulated-gate bipolar transistor (IGBT) devices are experimentally optimized to be used in power propulsion control unit. Various processing conditions such as resistivity of Si wafer, implantation, and geometrical field rings were tested to obtain high breakdown voltage (BV). Optimal design of multi-zone junction termination extension (JTE) with ring fields formed on 160 Ω silicon wafer by only one-step wet etching undoer implant conditions (energy: 120 keV and dosage: 9.0 × 1013 cm-2) is suitable to obtain the highest BV. From technology computer aided design (TCAD) simulation, JTE-IGBT with low fixed oxide charge (QF) derives high BV due to the effect of electric field.

KW - Breakdown voltage

KW - Electric field

KW - Fixed oxide charge

KW - Insulated-Gate bipolar transistor

KW - Test element group

UR - http://www.scopus.com/inward/record.url?scp=85018970766&partnerID=8YFLogxK

U2 - 10.1166/jnn.2017.14181

DO - 10.1166/jnn.2017.14181

M3 - Article

AN - SCOPUS:85018970766

SN - 1533-4880

VL - 17

SP - 5606

EP - 5611

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 8

ER -

Optimized design of multi-zone junction termination extension for high voltage power devices (IGBTs)

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Keywords

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