Optimized lightning-rod effect to overcome trade-off between switching uniformity and on/off ratio in ReRAM

Daeseok Lee; Jeonghwan Song; Jiyong Woo; Jaesung Park; Sangsu Park; Euijun Cha; Sangheon Lee; Yunmo Koo; Kibong Moon; Hyunsang Hwang

doi:10.1109/LED.2013.2295592

Optimized lightning-rod effect to overcome trade-off between switching uniformity and on/off ratio in ReRAM

Daeseok Lee
, Jeonghwan Song
, Jiyong Woo
, Jaesung Park
, Sangsu Park
, Euijun Cha
, Sangheon Lee
, Yunmo Koo
, Kibong Moon
, Hyunsang Hwang

School of Electronics Engineering

Pohang University of Science and Technology
Gwangju Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

For uniform switching of resistive random access memory, narrower physical switching gap between an electrode and remained conducting filament can be an effective method, which also leads to degradation of ON/OFF ratio. To overcome a trade-off between the switching uniformity and the ON/OFF ratio, an additional layer was intentionally inserted. Consequently, improved uniformity of switching parameters was achieved without degradation of the ON/OFF ratio.

Original language	English
Article number	6705610
Pages (from-to)	214-216
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	35
Issue number	2
DOIs	https://doi.org/10.1109/LED.2013.2295592
State	Published - Feb 2014

Keywords

lightning-rod effect
ON/OFF ratio
ReRAM
triple layer structure
variability

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10.1109/LED.2013.2295592

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abstract = "For uniform switching of resistive random access memory, narrower physical switching gap between an electrode and remained conducting filament can be an effective method, which also leads to degradation of ON/OFF ratio. To overcome a trade-off between the switching uniformity and the ON/OFF ratio, an additional layer was intentionally inserted. Consequently, improved uniformity of switching parameters was achieved without degradation of the ON/OFF ratio.",

keywords = "lightning-rod effect, ON/OFF ratio, ReRAM, triple layer structure, variability",

author = "Daeseok Lee and Jeonghwan Song and Jiyong Woo and Jaesung Park and Sangsu Park and Euijun Cha and Sangheon Lee and Yunmo Koo and Kibong Moon and Hyunsang Hwang",

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T1 - Optimized lightning-rod effect to overcome trade-off between switching uniformity and on/off ratio in ReRAM

AU - Lee, Daeseok

AU - Song, Jeonghwan

AU - Woo, Jiyong

AU - Park, Jaesung

AU - Park, Sangsu

AU - Cha, Euijun

AU - Lee, Sangheon

AU - Koo, Yunmo

AU - Moon, Kibong

AU - Hwang, Hyunsang

PY - 2014/2

Y1 - 2014/2

N2 - For uniform switching of resistive random access memory, narrower physical switching gap between an electrode and remained conducting filament can be an effective method, which also leads to degradation of ON/OFF ratio. To overcome a trade-off between the switching uniformity and the ON/OFF ratio, an additional layer was intentionally inserted. Consequently, improved uniformity of switching parameters was achieved without degradation of the ON/OFF ratio.

AB - For uniform switching of resistive random access memory, narrower physical switching gap between an electrode and remained conducting filament can be an effective method, which also leads to degradation of ON/OFF ratio. To overcome a trade-off between the switching uniformity and the ON/OFF ratio, an additional layer was intentionally inserted. Consequently, improved uniformity of switching parameters was achieved without degradation of the ON/OFF ratio.

KW - lightning-rod effect

KW - ON/OFF ratio

KW - ReRAM

KW - triple layer structure

KW - variability

UR - https://www.scopus.com/pages/publications/84893830940

U2 - 10.1109/LED.2013.2295592

DO - 10.1109/LED.2013.2295592

M3 - Article

AN - SCOPUS:84893830940

SN - 0741-3106

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SP - 214

EP - 216

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

M1 - 6705610

ER -

Optimized lightning-rod effect to overcome trade-off between switching uniformity and on/off ratio in ReRAM

Abstract

Keywords

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