Optimized Programming Scheme Enabling Linear Potentiation in Filamentary HfO2 RRAM Synapse for Neuromorphic Systems

Jiyong Woo; Kibong Moon; Jeonghwan Song; Myounghoon Kwak; Jaesung Park; Hyunsang Hwang

doi:10.1109/TED.2016.2615648

Optimized Programming Scheme Enabling Linear Potentiation in Filamentary HfO₂ RRAM Synapse for Neuromorphic Systems

Jiyong Woo
, Kibong Moon
, Jeonghwan Song
, Myounghoon Kwak
, Jaesung Park
, Hyunsang Hwang

School of Electronics Engineering

Pohang University of Science and Technology

Research output: Contribution to journal › Article › peer-review

89 Scopus citations

Abstract

In this brief, we demonstrate the multilevel cell (MLC) characteristics of an HfO₂-based resistive memory (RRAM) array as a synaptic element for neuromorphic systems. We utilize various programming schemes to linearly change the resistance state with either set voltage/pulse ramping or gate voltage ramping. Our results reveal that the MLC relates to the size of the conductive filament involved in the movement of oxygen vacancies with respect to applying pulses. Thus, by optimizing the pulse for a set condition, such as an identical pulse, we achieve linearly increased MLC behavior, thereby enabling a high accuracy for pattern recognition in neuromorphic systems.

Original language	English
Article number	7676281
Pages (from-to)	5064-5067
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	63
Issue number	12
DOIs	https://doi.org/10.1109/TED.2016.2615648
State	Published - Dec 2016

Keywords

Filamentary switching
HfO2-based resistive memory (RRAM)
linear potentiation
neuromorphic system
synaptic device

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10.1109/TED.2016.2615648

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title = "Optimized Programming Scheme Enabling Linear Potentiation in Filamentary HfO2 RRAM Synapse for Neuromorphic Systems",

abstract = "In this brief, we demonstrate the multilevel cell (MLC) characteristics of an HfO2-based resistive memory (RRAM) array as a synaptic element for neuromorphic systems. We utilize various programming schemes to linearly change the resistance state with either set voltage/pulse ramping or gate voltage ramping. Our results reveal that the MLC relates to the size of the conductive filament involved in the movement of oxygen vacancies with respect to applying pulses. Thus, by optimizing the pulse for a set condition, such as an identical pulse, we achieve linearly increased MLC behavior, thereby enabling a high accuracy for pattern recognition in neuromorphic systems.",

keywords = "Filamentary switching, HfO2-based resistive memory (RRAM), linear potentiation, neuromorphic system, synaptic device",

author = "Jiyong Woo and Kibong Moon and Jeonghwan Song and Myounghoon Kwak and Jaesung Park and Hyunsang Hwang",

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T1 - Optimized Programming Scheme Enabling Linear Potentiation in Filamentary HfO2 RRAM Synapse for Neuromorphic Systems

AU - Woo, Jiyong

AU - Moon, Kibong

AU - Song, Jeonghwan

AU - Kwak, Myounghoon

AU - Park, Jaesung

AU - Hwang, Hyunsang

PY - 2016/12

Y1 - 2016/12

N2 - In this brief, we demonstrate the multilevel cell (MLC) characteristics of an HfO2-based resistive memory (RRAM) array as a synaptic element for neuromorphic systems. We utilize various programming schemes to linearly change the resistance state with either set voltage/pulse ramping or gate voltage ramping. Our results reveal that the MLC relates to the size of the conductive filament involved in the movement of oxygen vacancies with respect to applying pulses. Thus, by optimizing the pulse for a set condition, such as an identical pulse, we achieve linearly increased MLC behavior, thereby enabling a high accuracy for pattern recognition in neuromorphic systems.

AB - In this brief, we demonstrate the multilevel cell (MLC) characteristics of an HfO2-based resistive memory (RRAM) array as a synaptic element for neuromorphic systems. We utilize various programming schemes to linearly change the resistance state with either set voltage/pulse ramping or gate voltage ramping. Our results reveal that the MLC relates to the size of the conductive filament involved in the movement of oxygen vacancies with respect to applying pulses. Thus, by optimizing the pulse for a set condition, such as an identical pulse, we achieve linearly increased MLC behavior, thereby enabling a high accuracy for pattern recognition in neuromorphic systems.

KW - Filamentary switching

KW - HfO2-based resistive memory (RRAM)

KW - linear potentiation

KW - neuromorphic system

KW - synaptic device

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M3 - Article

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 12

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ER -

Optimized Programming Scheme Enabling Linear Potentiation in Filamentary HfO₂ RRAM Synapse for Neuromorphic Systems

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