Optimum oxygen concentration for the optoelectronic properties of IR sensitive VOx thin films

K. M. Park; S. Yi; S. Moon; S. Im

doi:10.1016/S0925-3467(01)00053-2

Optimum oxygen concentration for the optoelectronic properties of IR sensitive VO_x thin films

K. M. Park, S. Yi, S. Moon, S. Im

Research output: Contribution to journal › Conference article › peer-review

11 Scopus citations

Abstract

VO_x films were fabricated on thermally grown SiO₂ layers by reactive r.f. sputtering at room temperature. The working pressure was 5 mTorr, adjusted by changing Ar and O₂ flow from 1:1 to 10:1. Post annealing was performed at the temperatures of 200°C, 300°C, 400°C, 450°C, and 500°C. Electrical resistivities of VO_x films were measured at various temperatures from 25°C to 80°C and the temperature coefficient of resistance (TCR) was calculated for each film. The resistivity decreases with the increase of the annealing temperature and shows two steps of critical drops at 300°C and 450°C, respectively. This is attributed to the phase transitions of the as-deposited VO_x as characterized by X-ray diffraction (XRD). Considering both the TCR and resistivities, it is concluded that the optimum oxygen concentration, x in the VO_x films approaches to 2.25 (V₄O₉).

Original language	English
Pages (from-to)	311-314
Number of pages	4
Journal	Optical Materials
Volume	17
Issue number	1-2
DOIs	https://doi.org/10.1016/S0925-3467(01)00053-2
State	Published - Jun 2001
Event	Optoelectronics I: Materials and Technologies for Optoelectronic Devices - Strasbourg, France Duration: 30 May 2000 → 2 Jun 2000

Keywords

Phase transition
Resistivity
TCR
VO films
XRD
r.f. sputtering

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10.1016/S0925-3467(01)00053-2

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title = "Optimum oxygen concentration for the optoelectronic properties of IR sensitive VOx thin films",

abstract = "VOx films were fabricated on thermally grown SiO2 layers by reactive r.f. sputtering at room temperature. The working pressure was 5 mTorr, adjusted by changing Ar and O2 flow from 1:1 to 10:1. Post annealing was performed at the temperatures of 200°C, 300°C, 400°C, 450°C, and 500°C. Electrical resistivities of VOx films were measured at various temperatures from 25°C to 80°C and the temperature coefficient of resistance (TCR) was calculated for each film. The resistivity decreases with the increase of the annealing temperature and shows two steps of critical drops at 300°C and 450°C, respectively. This is attributed to the phase transitions of the as-deposited VOx as characterized by X-ray diffraction (XRD). Considering both the TCR and resistivities, it is concluded that the optimum oxygen concentration, x in the VOx films approaches to 2.25 (V4O9).",

keywords = "Phase transition, Resistivity, TCR, VO films, XRD, r.f. sputtering",

author = "Park, {K. M.} and S. Yi and S. Moon and S. Im",

year = "2001",

month = jun,

doi = "10.1016/S0925-3467(01)00053-2",

language = "English",

volume = "17",

pages = "311--314",

journal = "Optical Materials",

issn = "0925-3467",

publisher = "Elsevier B.V.",

number = "1-2",

note = "Optoelectronics I: Materials and Technologies for Optoelectronic Devices ; Conference date: 30-05-2000 Through 02-06-2000",

}

TY - JOUR

T1 - Optimum oxygen concentration for the optoelectronic properties of IR sensitive VOx thin films

AU - Park, K. M.

AU - Yi, S.

AU - Moon, S.

AU - Im, S.

PY - 2001/6

Y1 - 2001/6

N2 - VOx films were fabricated on thermally grown SiO2 layers by reactive r.f. sputtering at room temperature. The working pressure was 5 mTorr, adjusted by changing Ar and O2 flow from 1:1 to 10:1. Post annealing was performed at the temperatures of 200°C, 300°C, 400°C, 450°C, and 500°C. Electrical resistivities of VOx films were measured at various temperatures from 25°C to 80°C and the temperature coefficient of resistance (TCR) was calculated for each film. The resistivity decreases with the increase of the annealing temperature and shows two steps of critical drops at 300°C and 450°C, respectively. This is attributed to the phase transitions of the as-deposited VOx as characterized by X-ray diffraction (XRD). Considering both the TCR and resistivities, it is concluded that the optimum oxygen concentration, x in the VOx films approaches to 2.25 (V4O9).

AB - VOx films were fabricated on thermally grown SiO2 layers by reactive r.f. sputtering at room temperature. The working pressure was 5 mTorr, adjusted by changing Ar and O2 flow from 1:1 to 10:1. Post annealing was performed at the temperatures of 200°C, 300°C, 400°C, 450°C, and 500°C. Electrical resistivities of VOx films were measured at various temperatures from 25°C to 80°C and the temperature coefficient of resistance (TCR) was calculated for each film. The resistivity decreases with the increase of the annealing temperature and shows two steps of critical drops at 300°C and 450°C, respectively. This is attributed to the phase transitions of the as-deposited VOx as characterized by X-ray diffraction (XRD). Considering both the TCR and resistivities, it is concluded that the optimum oxygen concentration, x in the VOx films approaches to 2.25 (V4O9).

KW - Phase transition

KW - Resistivity

KW - TCR

KW - VO films

KW - XRD

KW - r.f. sputtering

UR - http://www.scopus.com/inward/record.url?scp=0035361360&partnerID=8YFLogxK

U2 - 10.1016/S0925-3467(01)00053-2

DO - 10.1016/S0925-3467(01)00053-2

M3 - Conference article

AN - SCOPUS:0035361360

SN - 0925-3467

VL - 17

SP - 311

EP - 314

JO - Optical Materials

JF - Optical Materials

IS - 1-2

T2 - Optoelectronics I: Materials and Technologies for Optoelectronic Devices

Y2 - 30 May 2000 through 2 June 2000

ER -

Optimum oxygen concentration for the optoelectronic properties of IR sensitive VO_x thin films

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Keywords

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