TY - JOUR
T1 - Optoelectronic Properties of Sol-gel Processed SnO2 Thin Film Transistors
AU - Lee, Changmin
AU - Jang, Jaewon
N1 - Publisher Copyright:
© 2020, Korean Sensors Society. All rights reserved.
PY - 2020/9
Y1 - 2020/9
N2 - In this study, a highly crystalline SnO2 thin film was formed using a sol–gel process. In addition, a SnO2 thin-film transistor was successfully fabricated. The fabricated SnO2 thin-film transistor exhibited conventional n-type semiconductor properties, with a mobility of 0.1 cm2 V-1 s-1, an on/off current ratio of 1.2 × 105, and a subthreshold swing of 2.69. The formed SnO2 had a larger bandgap (3.95 eV) owing to the bandgap broadening effect. The fabricated photosensor exhibited a responsivity of 1.4 × 10-6 Jones, gain of 1.43 × 107, detectivity of 2.75 × 10-6 cm Hz1/2 W−1, and photosensitivity of 4.67 × 102.
AB - In this study, a highly crystalline SnO2 thin film was formed using a sol–gel process. In addition, a SnO2 thin-film transistor was successfully fabricated. The fabricated SnO2 thin-film transistor exhibited conventional n-type semiconductor properties, with a mobility of 0.1 cm2 V-1 s-1, an on/off current ratio of 1.2 × 105, and a subthreshold swing of 2.69. The formed SnO2 had a larger bandgap (3.95 eV) owing to the bandgap broadening effect. The fabricated photosensor exhibited a responsivity of 1.4 × 10-6 Jones, gain of 1.43 × 107, detectivity of 2.75 × 10-6 cm Hz1/2 W−1, and photosensitivity of 4.67 × 102.
KW - Photo sensor
KW - SnO
KW - Sol-gel
KW - Thin film transistor
UR - http://www.scopus.com/inward/record.url?scp=85170357285&partnerID=8YFLogxK
U2 - 10.46670/JSST.2020.29.5.328
DO - 10.46670/JSST.2020.29.5.328
M3 - Article
AN - SCOPUS:85170357285
SN - 1225-5475
VL - 29
SP - 328
EP - 331
JO - Journal of Sensor Science and Technology
JF - Journal of Sensor Science and Technology
IS - 5
ER -