Optoelectronic Properties of Sol-gel Processed SnO2 Thin Film Transistors

Changmin Lee; Jaewon Jang

doi:10.46670/JSST.2020.29.5.328

Optoelectronic Properties of Sol-gel Processed SnO2 Thin Film Transistors

Changmin Lee
, Jaewon Jang

School of Electronics Engineering

Kyungpook National University

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

In this study, a highly crystalline SnO₂ thin film was formed using a sol–gel process. In addition, a SnO₂ thin-film transistor was successfully fabricated. The fabricated SnO₂ thin-film transistor exhibited conventional n-type semiconductor properties, with a mobility of 0.1 cm² V^-1 s^-1, an on/off current ratio of 1.2 × 10⁵, and a subthreshold swing of 2.69. The formed SnO₂ had a larger bandgap (3.95 eV) owing to the bandgap broadening effect. The fabricated photosensor exhibited a responsivity of 1.4 × 10^-6 Jones, gain of 1.43 × 10⁷, detectivity of 2.75 × 10^-6 cm Hz^1/2 W⁻¹, and photosensitivity of 4.67 × 10².

Original language	English
Pages (from-to)	328-331
Number of pages	4
Journal	Journal of Sensor Science and Technology
Volume	29
Issue number	5
DOIs	https://doi.org/10.46670/JSST.2020.29.5.328
State	Published - Sep 2020

Keywords

Photo sensor
SnO
Sol-gel
Thin film transistor

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10.46670/JSST.2020.29.5.328

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title = "Optoelectronic Properties of Sol-gel Processed SnO2 Thin Film Transistors",

abstract = "In this study, a highly crystalline SnO2 thin film was formed using a sol–gel process. In addition, a SnO2 thin-film transistor was successfully fabricated. The fabricated SnO2 thin-film transistor exhibited conventional n-type semiconductor properties, with a mobility of 0.1 cm2 V-1 s-1, an on/off current ratio of 1.2 × 105, and a subthreshold swing of 2.69. The formed SnO2 had a larger bandgap (3.95 eV) owing to the bandgap broadening effect. The fabricated photosensor exhibited a responsivity of 1.4 × 10-6 Jones, gain of 1.43 × 107, detectivity of 2.75 × 10-6 cm Hz1/2 W−1, and photosensitivity of 4.67 × 102.",

keywords = "Photo sensor, SnO, Sol-gel, Thin film transistor",

author = "Changmin Lee and Jaewon Jang",

year = "2020",

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doi = "10.46670/JSST.2020.29.5.328",

language = "English",

volume = "29",

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journal = "Journal of Sensor Science and Technology",

issn = "1225-5475",

publisher = "Korean Sensors Society",

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TY - JOUR

T1 - Optoelectronic Properties of Sol-gel Processed SnO2 Thin Film Transistors

AU - Lee, Changmin

AU - Jang, Jaewon

PY - 2020/9

Y1 - 2020/9

N2 - In this study, a highly crystalline SnO2 thin film was formed using a sol–gel process. In addition, a SnO2 thin-film transistor was successfully fabricated. The fabricated SnO2 thin-film transistor exhibited conventional n-type semiconductor properties, with a mobility of 0.1 cm2 V-1 s-1, an on/off current ratio of 1.2 × 105, and a subthreshold swing of 2.69. The formed SnO2 had a larger bandgap (3.95 eV) owing to the bandgap broadening effect. The fabricated photosensor exhibited a responsivity of 1.4 × 10-6 Jones, gain of 1.43 × 107, detectivity of 2.75 × 10-6 cm Hz1/2 W−1, and photosensitivity of 4.67 × 102.

AB - In this study, a highly crystalline SnO2 thin film was formed using a sol–gel process. In addition, a SnO2 thin-film transistor was successfully fabricated. The fabricated SnO2 thin-film transistor exhibited conventional n-type semiconductor properties, with a mobility of 0.1 cm2 V-1 s-1, an on/off current ratio of 1.2 × 105, and a subthreshold swing of 2.69. The formed SnO2 had a larger bandgap (3.95 eV) owing to the bandgap broadening effect. The fabricated photosensor exhibited a responsivity of 1.4 × 10-6 Jones, gain of 1.43 × 107, detectivity of 2.75 × 10-6 cm Hz1/2 W−1, and photosensitivity of 4.67 × 102.

KW - Photo sensor

KW - SnO

KW - Sol-gel

KW - Thin film transistor

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U2 - 10.46670/JSST.2020.29.5.328

DO - 10.46670/JSST.2020.29.5.328

M3 - Article

AN - SCOPUS:85170357285

SN - 1225-5475

VL - 29

SP - 328

EP - 331

JO - Journal of Sensor Science and Technology

JF - Journal of Sensor Science and Technology

IS - 5

ER -

Optoelectronic Properties of Sol-gel Processed SnO2 Thin Film Transistors

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