Origin of green luminescence in ZnO thin film grown by molecular-beam epitaxy

Y. W. Heo; D. P. Norton; S. J. Pearton

doi:10.1063/1.2064308

Origin of green luminescence in ZnO thin film grown by molecular-beam epitaxy

Y. W. Heo, D. P. Norton, S. J. Pearton

University of Florida

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Abstract

The properties of ZnO films grown by molecular-beam epitaxy are reported. The primary focus was on understanding the origin of deep-level luminescence. A shift in deep-level emission from green to yellow is observed with reduced Zn pressure during the growth. Photoluminescence and Hall measurements were employed to study correlations between deep-level/near-band-edge emission and carrier density. With these results, we suggest that the green emission is related to donor-deep acceptor (Zn vacancy VZn-) and the yellow to donor-deep acceptor (oxygen vacancy, Oi-).

Original language	English
Article number	073502
Journal	Journal of Applied Physics
Volume	98
Issue number	7
DOIs	https://doi.org/10.1063/1.2064308
State	Published - 1 Oct 2005

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title = "Origin of green luminescence in ZnO thin film grown by molecular-beam epitaxy",

abstract = "The properties of ZnO films grown by molecular-beam epitaxy are reported. The primary focus was on understanding the origin of deep-level luminescence. A shift in deep-level emission from green to yellow is observed with reduced Zn pressure during the growth. Photoluminescence and Hall measurements were employed to study correlations between deep-level/near-band-edge emission and carrier density. With these results, we suggest that the green emission is related to donor-deep acceptor (Zn vacancy VZn-) and the yellow to donor-deep acceptor (oxygen vacancy, Oi-).",

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AB - The properties of ZnO films grown by molecular-beam epitaxy are reported. The primary focus was on understanding the origin of deep-level luminescence. A shift in deep-level emission from green to yellow is observed with reduced Zn pressure during the growth. Photoluminescence and Hall measurements were employed to study correlations between deep-level/near-band-edge emission and carrier density. With these results, we suggest that the green emission is related to donor-deep acceptor (Zn vacancy VZn-) and the yellow to donor-deep acceptor (oxygen vacancy, Oi-).

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Origin of green luminescence in ZnO thin film grown by molecular-beam epitaxy

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