Origin of green luminescence in ZnO thin film grown by molecular-beam epitaxy

Y. W. Heo; D. P. Norton; S. J. Pearton

doi:10.1063/1.2064308

Origin of green luminescence in ZnO thin film grown by molecular-beam epitaxy

Y. W. Heo
, D. P. Norton
, S. J. Pearton

University of Florida

Research output: Contribution to journal › Article › peer-review

427 Scopus citations

Abstract

The properties of ZnO films grown by molecular-beam epitaxy are reported. The primary focus was on understanding the origin of deep-level luminescence. A shift in deep-level emission from green to yellow is observed with reduced Zn pressure during the growth. Photoluminescence and Hall measurements were employed to study correlations between deep-level/near-band-edge emission and carrier density. With these results, we suggest that the green emission is related to donor-deep acceptor (Zn vacancy VZn-) and the yellow to donor-deep acceptor (oxygen vacancy, Oi-).

Original language	English
Article number	073502
Journal	Journal of Applied Physics
Volume	98
Issue number	7
DOIs	https://doi.org/10.1063/1.2064308
State	Published - 1 Oct 2005

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title = "Origin of green luminescence in ZnO thin film grown by molecular-beam epitaxy",

abstract = "The properties of ZnO films grown by molecular-beam epitaxy are reported. The primary focus was on understanding the origin of deep-level luminescence. A shift in deep-level emission from green to yellow is observed with reduced Zn pressure during the growth. Photoluminescence and Hall measurements were employed to study correlations between deep-level/near-band-edge emission and carrier density. With these results, we suggest that the green emission is related to donor-deep acceptor (Zn vacancy VZn-) and the yellow to donor-deep acceptor (oxygen vacancy, Oi-).",

author = "Heo, \{Y. W.\} and Norton, \{D. P.\} and Pearton, \{S. J.\}",

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AU - Heo, Y. W.

AU - Norton, D. P.

AU - Pearton, S. J.

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Y1 - 2005/10/1

N2 - The properties of ZnO films grown by molecular-beam epitaxy are reported. The primary focus was on understanding the origin of deep-level luminescence. A shift in deep-level emission from green to yellow is observed with reduced Zn pressure during the growth. Photoluminescence and Hall measurements were employed to study correlations between deep-level/near-band-edge emission and carrier density. With these results, we suggest that the green emission is related to donor-deep acceptor (Zn vacancy VZn-) and the yellow to donor-deep acceptor (oxygen vacancy, Oi-).

AB - The properties of ZnO films grown by molecular-beam epitaxy are reported. The primary focus was on understanding the origin of deep-level luminescence. A shift in deep-level emission from green to yellow is observed with reduced Zn pressure during the growth. Photoluminescence and Hall measurements were employed to study correlations between deep-level/near-band-edge emission and carrier density. With these results, we suggest that the green emission is related to donor-deep acceptor (Zn vacancy VZn-) and the yellow to donor-deep acceptor (oxygen vacancy, Oi-).

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U2 - 10.1063/1.2064308

DO - 10.1063/1.2064308

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VL - 98

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

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ER -

Origin of green luminescence in ZnO thin film grown by molecular-beam epitaxy

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