Oxide thin film transistors on novel flexible substrates

S. J. Pearton; Wantae Lim; Erica Douglas; Fan Ren; Young Woo Heo; D. P. Norton

doi:10.1117/12.844935

Oxide thin film transistors on novel flexible substrates

S. J. Pearton, Wantae Lim, Erica Douglas, Fan Ren, Young Woo Heo, D. P. Norton

University of Florida

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

Enhancement-mode TFTs based on amorphous InGaZnO channel were fabricated on paper, glass or plastic substrates at low temperature (< 100°C). The TFTs operated in enhancement mode and showed low operating voltages of 0.5-2.5 V, drain current on-to-off ratios of ∼ 10⁵, sub-threshold gate-voltage swing of 0.25-0.5 V.decade^-1, and high saturation mobilities of 5-12 cm².V^-1.s^-1. The devices exhibited small shifts during 1000 hours aging time at room temperature. Significant challenges remain, including improving the stability of the devices under bias, lowering the operating voltages, replacing metal contacts with conducting polymers that should be more resistant to cracking on rolling-up of flexible substrates and developing large-area printing processes that are compatible with manufacturing these devices on very large areas.

Original language	English
Title of host publication	Oxide-based Materials and Devices
DOIs	https://doi.org/10.1117/12.844935
State	Published - 2010
Event	Oxide-based Materials and Devices - San Francisco, CA, United States Duration: 24 Jan 2010 → 27 Jan 2010

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7603
ISSN (Print)	0277-786X

Conference

Conference	Oxide-based Materials and Devices
Country/Territory	United States
City	San Francisco, CA
Period	24/01/10 → 27/01/10

Keywords

Encapsulation
Flexible substrates
Indium gallium zinc oxide
Thin film transistors

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10.1117/12.844935

Cite this

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title = "Oxide thin film transistors on novel flexible substrates",

abstract = "Enhancement-mode TFTs based on amorphous InGaZnO channel were fabricated on paper, glass or plastic substrates at low temperature (< 100°C). The TFTs operated in enhancement mode and showed low operating voltages of 0.5-2.5 V, drain current on-to-off ratios of ∼ 105, sub-threshold gate-voltage swing of 0.25-0.5 V.decade-1, and high saturation mobilities of 5-12 cm2.V-1.s-1. The devices exhibited small shifts during 1000 hours aging time at room temperature. Significant challenges remain, including improving the stability of the devices under bias, lowering the operating voltages, replacing metal contacts with conducting polymers that should be more resistant to cracking on rolling-up of flexible substrates and developing large-area printing processes that are compatible with manufacturing these devices on very large areas.",

keywords = "Encapsulation, Flexible substrates, Indium gallium zinc oxide, Thin film transistors",

author = "Pearton, \{S. J.\} and Wantae Lim and Erica Douglas and Fan Ren and Heo, \{Young Woo\} and Norton, \{D. P.\}",

year = "2010",

doi = "10.1117/12.844935",

language = "English",

isbn = "9780819479990",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Oxide-based Materials and Devices",

note = "Oxide-based Materials and Devices ; Conference date: 24-01-2010 Through 27-01-2010",

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T1 - Oxide thin film transistors on novel flexible substrates

AU - Pearton, S. J.

AU - Lim, Wantae

AU - Douglas, Erica

AU - Ren, Fan

AU - Heo, Young Woo

AU - Norton, D. P.

PY - 2010

Y1 - 2010

N2 - Enhancement-mode TFTs based on amorphous InGaZnO channel were fabricated on paper, glass or plastic substrates at low temperature (< 100°C). The TFTs operated in enhancement mode and showed low operating voltages of 0.5-2.5 V, drain current on-to-off ratios of ∼ 105, sub-threshold gate-voltage swing of 0.25-0.5 V.decade-1, and high saturation mobilities of 5-12 cm2.V-1.s-1. The devices exhibited small shifts during 1000 hours aging time at room temperature. Significant challenges remain, including improving the stability of the devices under bias, lowering the operating voltages, replacing metal contacts with conducting polymers that should be more resistant to cracking on rolling-up of flexible substrates and developing large-area printing processes that are compatible with manufacturing these devices on very large areas.

AB - Enhancement-mode TFTs based on amorphous InGaZnO channel were fabricated on paper, glass or plastic substrates at low temperature (< 100°C). The TFTs operated in enhancement mode and showed low operating voltages of 0.5-2.5 V, drain current on-to-off ratios of ∼ 105, sub-threshold gate-voltage swing of 0.25-0.5 V.decade-1, and high saturation mobilities of 5-12 cm2.V-1.s-1. The devices exhibited small shifts during 1000 hours aging time at room temperature. Significant challenges remain, including improving the stability of the devices under bias, lowering the operating voltages, replacing metal contacts with conducting polymers that should be more resistant to cracking on rolling-up of flexible substrates and developing large-area printing processes that are compatible with manufacturing these devices on very large areas.

KW - Encapsulation

KW - Flexible substrates

KW - Indium gallium zinc oxide

KW - Thin film transistors

UR - https://www.scopus.com/pages/publications/77951706387

U2 - 10.1117/12.844935

DO - 10.1117/12.844935

M3 - Conference contribution

AN - SCOPUS:77951706387

SN - 9780819479990

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Oxide-based Materials and Devices

T2 - Oxide-based Materials and Devices

Y2 - 24 January 2010 through 27 January 2010

ER -

Oxide thin film transistors on novel flexible substrates

Abstract

Publication series

Conference

Keywords

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