p-type behavior in phosphorus-doped (Zn,Mg)O device structures

Y. W. Heo; Y. W. Kwon; Y. Li; S. J. Pearton; D. P. Norton

doi:10.1063/1.1737795

p-type behavior in phosphorus-doped (Zn,Mg)O device structures

Y. W. Heo
, Y. W. Kwon
, Y. Li
, S. J. Pearton
, D. P. Norton

University of Florida

Research output: Contribution to journal › Article › peer-review

228 Scopus citations

Abstract

The characteristics of metal-insulator-semiconductor (MIS) and junction thin-film device structures utilizing phosphorus-doped ZnO materials were examined. The capacitance-voltage characteristic of the MIS diode structures were measured in order to delineate the carrier type in the (Zn,Mg)O:P film. The I-V curves for reverse bias and strongly forward bias were nearly linear functions, suggesting the presence of a series resistance and reverse bias leakage conductance. The p-type symmetry was found to be highly dependent on the process and annealing conditions.

Original language	English
Pages (from-to)	3474-3476
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	18
DOIs	https://doi.org/10.1063/1.1737795
State	Published - 3 May 2004

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title = "p-type behavior in phosphorus-doped (Zn,Mg)O device structures",

abstract = "The characteristics of metal-insulator-semiconductor (MIS) and junction thin-film device structures utilizing phosphorus-doped ZnO materials were examined. The capacitance-voltage characteristic of the MIS diode structures were measured in order to delineate the carrier type in the (Zn,Mg)O:P film. The I-V curves for reverse bias and strongly forward bias were nearly linear functions, suggesting the presence of a series resistance and reverse bias leakage conductance. The p-type symmetry was found to be highly dependent on the process and annealing conditions.",

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AU - Heo, Y. W.

AU - Kwon, Y. W.

AU - Li, Y.

AU - Pearton, S. J.

AU - Norton, D. P.

PY - 2004/5/3

Y1 - 2004/5/3

N2 - The characteristics of metal-insulator-semiconductor (MIS) and junction thin-film device structures utilizing phosphorus-doped ZnO materials were examined. The capacitance-voltage characteristic of the MIS diode structures were measured in order to delineate the carrier type in the (Zn,Mg)O:P film. The I-V curves for reverse bias and strongly forward bias were nearly linear functions, suggesting the presence of a series resistance and reverse bias leakage conductance. The p-type symmetry was found to be highly dependent on the process and annealing conditions.

AB - The characteristics of metal-insulator-semiconductor (MIS) and junction thin-film device structures utilizing phosphorus-doped ZnO materials were examined. The capacitance-voltage characteristic of the MIS diode structures were measured in order to delineate the carrier type in the (Zn,Mg)O:P film. The I-V curves for reverse bias and strongly forward bias were nearly linear functions, suggesting the presence of a series resistance and reverse bias leakage conductance. The p-type symmetry was found to be highly dependent on the process and annealing conditions.

UR - https://www.scopus.com/pages/publications/2542468686

U2 - 10.1063/1.1737795

DO - 10.1063/1.1737795

M3 - Article

AN - SCOPUS:2542468686

SN - 0003-6951

VL - 84

SP - 3474

EP - 3476

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

p-type behavior in phosphorus-doped (Zn,Mg)O device structures

Abstract

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