Passivation study for in0.4AlAs/In0.65GaAs HEMTs by UHV RPECVD grown SiNx dielectrics and their impact on I-V Kink & low-frequency dispersion phenomena

Dae Hyun Kim; Hun Hee Noh; Sung Sun Choi; Jae Hak Lee; Kwang Seok Seo

Passivation study for in_0.4AlAs/In_0.65GaAs HEMTs by UHV RPECVD grown SiN_x dielectrics and their impact on I-V Kink & low-frequency dispersion phenomena

Dae Hyun Kim, Hun Hee Noh, Sung Sun Choi, Jae Hak Lee, Kwang Seok Seo

Research output: Contribution to journal › Conference article › peer-review

7 Scopus citations

Abstract

The influence of Silicon Nitride (SiN_x) passivation on the DC and low-frequency transconductance dispersion behaviours of In _0.4AlAs/In_0.65GaAs HEMTs has been investigated. Although the surface passivation using MBE grown thin InP etch-stop is effective to suppress I-V Kink phenomena, it has critical drawbacks of large gate leakage current, low gate turn-on (V_on) and breakdown voltage (BV _gd) due to low schottky barrier height (SBH) of InP layer. To resolve this problem, we have developed innovative SiN_x passivation process to prevent I-V kink as well as to maintain low gate leakage current by UHV Remote-PECVD system. Through the optimized SiN_x passivation process, the DC I-V Kink and the low-frequency transconductance dispersion could be significantly improved.

Original language	English
Pages (from-to)	354-357
Number of pages	4
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
State	Published - 2004
Event	2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima, Japan Duration: 31 May 2004 → 4 Jun 2004

Cite this

@article{61cce790efb64268899698e0d530959c,

title = "Passivation study for in0.4AlAs/In0.65GaAs HEMTs by UHV RPECVD grown SiNx dielectrics and their impact on I-V Kink & low-frequency dispersion phenomena",

abstract = "The influence of Silicon Nitride (SiNx) passivation on the DC and low-frequency transconductance dispersion behaviours of In 0.4AlAs/In0.65GaAs HEMTs has been investigated. Although the surface passivation using MBE grown thin InP etch-stop is effective to suppress I-V Kink phenomena, it has critical drawbacks of large gate leakage current, low gate turn-on (Von) and breakdown voltage (BV gd) due to low schottky barrier height (SBH) of InP layer. To resolve this problem, we have developed innovative SiNx passivation process to prevent I-V kink as well as to maintain low gate leakage current by UHV Remote-PECVD system. Through the optimized SiNx passivation process, the DC I-V Kink and the low-frequency transconductance dispersion could be significantly improved.",

author = "Kim, {Dae Hyun} and Noh, {Hun Hee} and Choi, {Sung Sun} and Lee, {Jae Hak} and Seo, {Kwang Seok}",

year = "2004",

language = "English",

pages = "354--357",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM ; Conference date: 31-05-2004 Through 04-06-2004",

}

Passivation study for in_0.4AlAs/In_0.65GaAs HEMTs by UHV RPECVD grown SiN_x dielectrics and their impact on I-V Kink & low-frequency dispersion phenomena. / Kim, Dae Hyun; Noh, Hun Hee; Choi, Sung Sun et al.
In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2004, p. 354-357.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Passivation study for in0.4AlAs/In0.65GaAs HEMTs by UHV RPECVD grown SiNx dielectrics and their impact on I-V Kink & low-frequency dispersion phenomena

AU - Kim, Dae Hyun

AU - Noh, Hun Hee

AU - Choi, Sung Sun

AU - Lee, Jae Hak

AU - Seo, Kwang Seok

PY - 2004

Y1 - 2004

N2 - The influence of Silicon Nitride (SiNx) passivation on the DC and low-frequency transconductance dispersion behaviours of In 0.4AlAs/In0.65GaAs HEMTs has been investigated. Although the surface passivation using MBE grown thin InP etch-stop is effective to suppress I-V Kink phenomena, it has critical drawbacks of large gate leakage current, low gate turn-on (Von) and breakdown voltage (BV gd) due to low schottky barrier height (SBH) of InP layer. To resolve this problem, we have developed innovative SiNx passivation process to prevent I-V kink as well as to maintain low gate leakage current by UHV Remote-PECVD system. Through the optimized SiNx passivation process, the DC I-V Kink and the low-frequency transconductance dispersion could be significantly improved.

AB - The influence of Silicon Nitride (SiNx) passivation on the DC and low-frequency transconductance dispersion behaviours of In 0.4AlAs/In0.65GaAs HEMTs has been investigated. Although the surface passivation using MBE grown thin InP etch-stop is effective to suppress I-V Kink phenomena, it has critical drawbacks of large gate leakage current, low gate turn-on (Von) and breakdown voltage (BV gd) due to low schottky barrier height (SBH) of InP layer. To resolve this problem, we have developed innovative SiNx passivation process to prevent I-V kink as well as to maintain low gate leakage current by UHV Remote-PECVD system. Through the optimized SiNx passivation process, the DC I-V Kink and the low-frequency transconductance dispersion could be significantly improved.

UR - http://www.scopus.com/inward/record.url?scp=23744508562&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:23744508562

SN - 1092-8669

SP - 354

EP - 357

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

T2 - 2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM

Y2 - 31 May 2004 through 4 June 2004

ER -

Passivation study for in_0.4AlAs/In_0.65GaAs HEMTs by UHV RPECVD grown SiN_x dielectrics and their impact on I-V Kink & low-frequency dispersion phenomena

Abstract

Other files and links

Fingerprint

Cite this