Performance and carrier transport analysis of In0.7Ga0.3As quantum-well MOSFETs with Al2O3/HfO2 gate stack

Seung Woo Son, Jung Ho Park, Ji Min Baek, Jin Su Kim, Do Kywn Kim, Seung Heon Shin, S. K. Banerjee, Jung Hee Lee, Tae Woo Kim, Dae Hyun Kim

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

In this paper, we have fabricated and characterized In0.7Ga0.3As quantum-well (QW) metal-oxide-semiconductor field-effect-transistors (MOSFETs). We have employed the gate dielectric of the Al2O3/HfO2 (0.6/2 nm) bi-layer stack by ALD. The fabricated device with Lg = 4 μm exhibits a record maximum transconductance (gm-max) in excess of 520 μS/μm at >1 μm region, and reasonably good electrostatic integrity, such as SS = 110 mV/decade and DIBL = 43 mV/V. Also, we have investigated the gate length scaling behavior in terms of output, transconductance, and transfer characteristics. In particular, our devices feature very uniform values of the electrostatic integrity, such as SS = 100-110 mV/decade, VT = -0.25 V to -0.2 V and DIBL = 40-50 mV/V, as Lg decreases from 10 μm to 4 μm. Furthermore, we have explored the impact of source resistance (RS) onto the device characteristics of the InGaAs QW MOSFETs. In doing so, we have modeled both measured extrinsic transconductance (gm-ext) and intrinsic transconductance (gm-int) as a function of Lg.

Original languageEnglish
Pages (from-to)63-67
Number of pages5
JournalSolid-State Electronics
Volume123
DOIs
StatePublished - 1 Sep 2016

Keywords

  • InGaAs MOSFETs
  • Logic
  • Modeling
  • Transconductance

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