Abstract
In this paper, we have fabricated and characterized In0.7Ga0.3As quantum-well (QW) metal-oxide-semiconductor field-effect-transistors (MOSFETs). We have employed the gate dielectric of the Al2O3/HfO2 (0.6/2 nm) bi-layer stack by ALD. The fabricated device with Lg = 4 μm exhibits a record maximum transconductance (gm-max) in excess of 520 μS/μm at >1 μm region, and reasonably good electrostatic integrity, such as SS = 110 mV/decade and DIBL = 43 mV/V. Also, we have investigated the gate length scaling behavior in terms of output, transconductance, and transfer characteristics. In particular, our devices feature very uniform values of the electrostatic integrity, such as SS = 100-110 mV/decade, VT = -0.25 V to -0.2 V and DIBL = 40-50 mV/V, as Lg decreases from 10 μm to 4 μm. Furthermore, we have explored the impact of source resistance (RS) onto the device characteristics of the InGaAs QW MOSFETs. In doing so, we have modeled both measured extrinsic transconductance (gm-ext) and intrinsic transconductance (gm-int) as a function of Lg.
Original language | English |
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Pages (from-to) | 63-67 |
Number of pages | 5 |
Journal | Solid-State Electronics |
Volume | 123 |
DOIs | |
State | Published - 1 Sep 2016 |
Keywords
- InGaAs MOSFETs
- Logic
- Modeling
- Transconductance