Performance Enhancement of 0.13μm In_0.65GaAs PHEMT by Reduction of Parasitic Effect Using Novel Double-Deck Shaped (DDS) Gate Structure

High Performance 0.13 μm In_0.65GaAs PHEMT's have been realized utilizing novel Double-Deck Shaped (DDS) gate technology. By etching additionally grown InGaAs contact layer through initial line opening of gate foot and forming T-gate structure on top of the initial line, namely DDS gate, a remarkable suppression of gate fringing capacitance could be obtained, which also led to an improvement of device microwave performance. Moreover, a large reduction of gate hole current, due to the impact ionization in the strained InGaAs channel layer, was achieved by operating the device in quasi enhancement mode region, which could be realized by removing InP etch-stopper selectively through a low damaged Ar-based RIE. These features enabled to suppress kink effect and enhance on-state breakdown voltage (BV_DS,ON) in a DC I-V transfer curve.