Performance enhancement of GaN SB-MOSFET on Si substrate using two-step growth method

Dong Seok Kim; Tae Hyeon Kim; Chul Ho Won; Hee Sung Kang; Ki Won Kim; Ki Sik Im; Yong Soo Lee; Sung Ho Hahm; Jung Hee Lee; Jae Hoon Lee; Jong Bong Ha; Youngho Bae; Sorin Cristoloveanu

doi:10.1016/j.mee.2011.03.119

Performance enhancement of GaN SB-MOSFET on Si substrate using two-step growth method

Dong Seok Kim, Tae Hyeon Kim, Chul Ho Won, Hee Sung Kang, Ki Won Kim, Ki Sik Im, Yong Soo Lee, Sung Ho Hahm, Jung Hee Lee, Jae Hoon Lee, Jong Bong Ha, Youngho Bae, Sorin Cristoloveanu

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

We have grown high quality GaN layers on (1 1 1)-oriented silicon substrate using a two-step growth method and fabricated high-performance normally-off n-channel GaN Schottky-barrier MOSFET (SB-MOSFET). Indium-tin-oxide (ITO) was used as Schottky-barrier contact for source and drain (S/D) because the work function of ITO is close to the electron affinity of GaN. Due to enhanced crystalline quality and reduced surface roughness of GaN layer grown by two-step process, the fabricated device exhibited much improved performances: sufficiently high threshold voltage of 3.75 V, subthreshold slope of 171 mV/dec, low specific on-resistance of 9.98 mΩ cm², and very high field-effect mobility of 271 cm²/V s. This is the highest mobility value among the GaN MOSFETs ever reported so far.

Original language	English
Pages (from-to)	1221-1224
Number of pages	4
Journal	Microelectronic Engineering
Volume	88
Issue number	7
DOIs	https://doi.org/10.1016/j.mee.2011.03.119
State	Published - Jul 2011

Keywords

GaN
ITO
MOCVD
Normally-off
SB-MOSFET
Si(1 1 1)
Two-step growth

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10.1016/j.mee.2011.03.119

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@article{66d5218c100446cf867d0197bcf4bfc1,

title = "Performance enhancement of GaN SB-MOSFET on Si substrate using two-step growth method",

abstract = "We have grown high quality GaN layers on (1 1 1)-oriented silicon substrate using a two-step growth method and fabricated high-performance normally-off n-channel GaN Schottky-barrier MOSFET (SB-MOSFET). Indium-tin-oxide (ITO) was used as Schottky-barrier contact for source and drain (S/D) because the work function of ITO is close to the electron affinity of GaN. Due to enhanced crystalline quality and reduced surface roughness of GaN layer grown by two-step process, the fabricated device exhibited much improved performances: sufficiently high threshold voltage of 3.75 V, subthreshold slope of 171 mV/dec, low specific on-resistance of 9.98 mΩ cm2, and very high field-effect mobility of 271 cm2/V s. This is the highest mobility value among the GaN MOSFETs ever reported so far.",

keywords = "GaN, ITO, MOCVD, Normally-off, SB-MOSFET, Si(1 1 1), Two-step growth",

author = "Kim, {Dong Seok} and Kim, {Tae Hyeon} and Won, {Chul Ho} and Kang, {Hee Sung} and Kim, {Ki Won} and Im, {Ki Sik} and Lee, {Yong Soo} and Hahm, {Sung Ho} and Lee, {Jung Hee} and Lee, {Jae Hoon} and Ha, {Jong Bong} and Youngho Bae and Sorin Cristoloveanu",

year = "2011",

month = jul,

doi = "10.1016/j.mee.2011.03.119",

language = "English",

volume = "88",

pages = "1221--1224",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Performance enhancement of GaN SB-MOSFET on Si substrate using two-step growth method

AU - Kim, Dong Seok

AU - Kim, Tae Hyeon

AU - Won, Chul Ho

AU - Kang, Hee Sung

AU - Kim, Ki Won

AU - Im, Ki Sik

AU - Lee, Yong Soo

AU - Hahm, Sung Ho

AU - Lee, Jung Hee

AU - Lee, Jae Hoon

AU - Ha, Jong Bong

AU - Bae, Youngho

AU - Cristoloveanu, Sorin

PY - 2011/7

Y1 - 2011/7

N2 - We have grown high quality GaN layers on (1 1 1)-oriented silicon substrate using a two-step growth method and fabricated high-performance normally-off n-channel GaN Schottky-barrier MOSFET (SB-MOSFET). Indium-tin-oxide (ITO) was used as Schottky-barrier contact for source and drain (S/D) because the work function of ITO is close to the electron affinity of GaN. Due to enhanced crystalline quality and reduced surface roughness of GaN layer grown by two-step process, the fabricated device exhibited much improved performances: sufficiently high threshold voltage of 3.75 V, subthreshold slope of 171 mV/dec, low specific on-resistance of 9.98 mΩ cm2, and very high field-effect mobility of 271 cm2/V s. This is the highest mobility value among the GaN MOSFETs ever reported so far.

AB - We have grown high quality GaN layers on (1 1 1)-oriented silicon substrate using a two-step growth method and fabricated high-performance normally-off n-channel GaN Schottky-barrier MOSFET (SB-MOSFET). Indium-tin-oxide (ITO) was used as Schottky-barrier contact for source and drain (S/D) because the work function of ITO is close to the electron affinity of GaN. Due to enhanced crystalline quality and reduced surface roughness of GaN layer grown by two-step process, the fabricated device exhibited much improved performances: sufficiently high threshold voltage of 3.75 V, subthreshold slope of 171 mV/dec, low specific on-resistance of 9.98 mΩ cm2, and very high field-effect mobility of 271 cm2/V s. This is the highest mobility value among the GaN MOSFETs ever reported so far.

KW - GaN

KW - ITO

KW - MOCVD

KW - Normally-off

KW - SB-MOSFET

KW - Si(1 1 1)

KW - Two-step growth

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U2 - 10.1016/j.mee.2011.03.119

DO - 10.1016/j.mee.2011.03.119

M3 - Article

AN - SCOPUS:79958043746

SN - 0167-9317

VL - 88

SP - 1221

EP - 1224

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 7

ER -

Performance enhancement of GaN SB-MOSFET on Si substrate using two-step growth method

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