Performance study of the silicon strip detector

H. J. Hyun, J. B. Bae, S. H. Do, S. W. Jung, D. H. Kah, H. D. Kang, D. S. Kim, H. J. Kim, Y. I. Kim, H. Park, S. S. Ryu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

We designed and fabricated the DC-coupled double-sided silicon strip sensor and the AC/DC-coupled single-sided sensors. They showed the good electrical characteristics such as leakage current and capacitance. Good separation of signal from noise is important and we measured the signal-to-noise ratios of the developed sensors. This is defined as the ratio of the most probable energy deposit in the sensor to the noise RMS. We presented the measurement result of the signal-to-noise ratio with developed silicon strip sensor and readout electronics using 90Sr beta source and 45 MeV proton beam.

Original languageEnglish
Title of host publication2006 IEEE Nuclear Science Symposium - Conference Record
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages713-716
Number of pages4
ISBN (Print)1424405610, 9781424405619
DOIs
StatePublished - 2006
Event2006 IEEE Nuclear Science Symposium, Medical Imaging Conference and 15th International Workshop on Room-Temperature Semiconductor X- and Gamma-Ray Detectors, Special Focus Workshops, NSS/MIC/RTSD - San Diego, CA, United States
Duration: 29 Oct 20064 Nov 2006

Publication series

NameIEEE Nuclear Science Symposium Conference Record
Volume2
ISSN (Print)1095-7863

Conference

Conference2006 IEEE Nuclear Science Symposium, Medical Imaging Conference and 15th International Workshop on Room-Temperature Semiconductor X- and Gamma-Ray Detectors, Special Focus Workshops, NSS/MIC/RTSD
Country/TerritoryUnited States
CitySan Diego, CA
Period29/10/064/11/06

Keywords

  • Readout electronics
  • Signal-to-noise ratio
  • Silicon strip sensors

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