Phase-change memory cycling endurance

Sang Bum Kim; Geoffrey W. Burr; Wanki Kim; Sung Wook Nam

doi:10.1557/mrs.2019.205

Phase-change memory cycling endurance

Sang Bum Kim, Geoffrey W. Burr, Wanki Kim, Sung Wook Nam

Department of Medicine

Research output: Contribution to journal › Article › peer-review

46 Scopus citations

Abstract

The cycling endurance of phase-change memory is one of the last hurdles to overcome to enable its adoption in the larger market for persistent memory products. Phase-change memory cycling endurance failures, whether they are stuck-SET (caused by elemental segregation) or stuck-RESET (caused by void formation), are caused by atomic migration. Various driving forces responsible for the atomic migration have been identified, such as hole-wind force, electrostatic force, and crystallization-induced segregation. We introduce several strategies to improve cycling endurance based on an understanding of driving forces and interactions among them. Utilizing some of these endurance-improving techniques, record-high phase-change memory cycling endurance at around 10¹² cycles has been recently reported using a confined phase-change memory cell with a metallic liner.

Original language	English
Pages (from-to)	710-714
Number of pages	5
Journal	MRS Bulletin
Volume	44
Issue number	9
DOIs	https://doi.org/10.1557/mrs.2019.205
State	Published - 1 Sep 2019

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abstract = "The cycling endurance of phase-change memory is one of the last hurdles to overcome to enable its adoption in the larger market for persistent memory products. Phase-change memory cycling endurance failures, whether they are stuck-SET (caused by elemental segregation) or stuck-RESET (caused by void formation), are caused by atomic migration. Various driving forces responsible for the atomic migration have been identified, such as hole-wind force, electrostatic force, and crystallization-induced segregation. We introduce several strategies to improve cycling endurance based on an understanding of driving forces and interactions among them. Utilizing some of these endurance-improving techniques, record-high phase-change memory cycling endurance at around 1012 cycles has been recently reported using a confined phase-change memory cell with a metallic liner.",

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Phase-change memory cycling endurance

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