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Photo-insensitive amorphous oxide thin-film transistor integrated with a plasmonic filter for transparent electronics

  • Seongpil Chang
  • , Yun Seon Do
  • , Jong Woo Kim
  • , Bo Yeon Hwang
  • , Jinnil Choi
  • , Byung Hyun Choi
  • , Yun Hi Lee
  • , Kyung Cheol Choi
  • , Byeong Kwon Ju
  • Korea University
  • Hanbat National University
  • Korea Institute of Ceramic Engineering And Technology
  • Korea Advanced Institute of Science and Technology

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

A study was conducted to demonstrate how a photo-insensitive amorphous oxide thin-film transistor was integrated with a plasmonic filter (PF) for transparent electronics. Metal structures at the submicron scale demonstrated a unique optical response known as a surface plasmon (SP). A metallic film with two dimensional nanohole arrays showed high transmission at the SP resonance frequency and the optical response related to this resonance phenomenon could be easily designed by the material and geometrical factors. This structural coloring technology using thin metal films was found to be superior in filtering performance as compared to the conventional dye-based color filter that experienced degradation by heat and light due to the low chemical stability of the organic-dye material.

Original languageEnglish
Pages (from-to)3482-3487
Number of pages6
JournalAdvanced Functional Materials
Volume24
Issue number23
DOIs
StatePublished - 18 Jun 2014

Keywords

  • amorphous oxides
  • negative bias illumination stress
  • plasmonic filters
  • semiconductors
  • transistors
  • transparent electronics

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