Photopatternable, highly conductive and low work function polymer electrodes for high-performance n-type bottom contact organic transistors

Kipyo Hong; Se Hyun Kim; Chanwoo Yang; Tae Kyu An; Hyojung Cha; Chanjun Park; Chan Eon Park

doi:10.1016/j.orgel.2010.12.022

Photopatternable, highly conductive and low work function polymer electrodes for high-performance n-type bottom contact organic transistors

Kipyo Hong, Se Hyun Kim, Chanwoo Yang, Tae Kyu An, Hyojung Cha, Chanjun Park, Chan Eon Park

Major in Hydrogen & Renewable Energy

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

We demonstrate the use of n-type N,N′-ditridecyl-3,4,9,10- perylenetetracarboxylic diimide (PTCDI-C13) bottom contact organic field-effect transistors that employ photopatternable highly conductive poly(3,4- ethylenedioxythiophene):tosylate (PEDOT:Tos) source/drain electrodes characterized by a very low work function (4.3 eV). Due to the low work function of this material, the electron injection barrier between PTCDI-C13 and PEDOT:Tos was 0.25 eV lower than that between PTCDI-C13 and gold. The low injection barrier reduced the contact resistance, yielding a high field effect mobility in transistors based on PEDOT:Tos (0.145 cm²/Vs); the field effect mobility was 16 times higher than that in transistors based on gold (0.009 cm²/Vs).

Original language	English
Pages (from-to)	516-519
Number of pages	4
Journal	Organic Electronics
Volume	12
Issue number	3
DOIs	https://doi.org/10.1016/j.orgel.2010.12.022
State	Published - Mar 2011

Keywords

Conductive polymer
Low work function
Source/drain electrodes
n-Type organic field-effect transistor

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10.1016/j.orgel.2010.12.022

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title = "Photopatternable, highly conductive and low work function polymer electrodes for high-performance n-type bottom contact organic transistors",

abstract = "We demonstrate the use of n-type N,N′-ditridecyl-3,4,9,10- perylenetetracarboxylic diimide (PTCDI-C13) bottom contact organic field-effect transistors that employ photopatternable highly conductive poly(3,4- ethylenedioxythiophene):tosylate (PEDOT:Tos) source/drain electrodes characterized by a very low work function (4.3 eV). Due to the low work function of this material, the electron injection barrier between PTCDI-C13 and PEDOT:Tos was 0.25 eV lower than that between PTCDI-C13 and gold. The low injection barrier reduced the contact resistance, yielding a high field effect mobility in transistors based on PEDOT:Tos (0.145 cm2/Vs); the field effect mobility was 16 times higher than that in transistors based on gold (0.009 cm2/Vs).",

keywords = "Conductive polymer, Low work function, Source/drain electrodes, n-Type organic field-effect transistor",

author = "Kipyo Hong and Kim, {Se Hyun} and Chanwoo Yang and An, {Tae Kyu} and Hyojung Cha and Chanjun Park and Park, {Chan Eon}",

year = "2011",

month = mar,

doi = "10.1016/j.orgel.2010.12.022",

language = "English",

volume = "12",

pages = "516--519",

journal = "Organic Electronics",

issn = "1566-1199",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Photopatternable, highly conductive and low work function polymer electrodes for high-performance n-type bottom contact organic transistors

AU - Hong, Kipyo

AU - Kim, Se Hyun

AU - Yang, Chanwoo

AU - An, Tae Kyu

AU - Cha, Hyojung

AU - Park, Chanjun

AU - Park, Chan Eon

PY - 2011/3

Y1 - 2011/3

N2 - We demonstrate the use of n-type N,N′-ditridecyl-3,4,9,10- perylenetetracarboxylic diimide (PTCDI-C13) bottom contact organic field-effect transistors that employ photopatternable highly conductive poly(3,4- ethylenedioxythiophene):tosylate (PEDOT:Tos) source/drain electrodes characterized by a very low work function (4.3 eV). Due to the low work function of this material, the electron injection barrier between PTCDI-C13 and PEDOT:Tos was 0.25 eV lower than that between PTCDI-C13 and gold. The low injection barrier reduced the contact resistance, yielding a high field effect mobility in transistors based on PEDOT:Tos (0.145 cm2/Vs); the field effect mobility was 16 times higher than that in transistors based on gold (0.009 cm2/Vs).

AB - We demonstrate the use of n-type N,N′-ditridecyl-3,4,9,10- perylenetetracarboxylic diimide (PTCDI-C13) bottom contact organic field-effect transistors that employ photopatternable highly conductive poly(3,4- ethylenedioxythiophene):tosylate (PEDOT:Tos) source/drain electrodes characterized by a very low work function (4.3 eV). Due to the low work function of this material, the electron injection barrier between PTCDI-C13 and PEDOT:Tos was 0.25 eV lower than that between PTCDI-C13 and gold. The low injection barrier reduced the contact resistance, yielding a high field effect mobility in transistors based on PEDOT:Tos (0.145 cm2/Vs); the field effect mobility was 16 times higher than that in transistors based on gold (0.009 cm2/Vs).

KW - Conductive polymer

KW - Low work function

KW - Source/drain electrodes

KW - n-Type organic field-effect transistor

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U2 - 10.1016/j.orgel.2010.12.022

DO - 10.1016/j.orgel.2010.12.022

M3 - Article

AN - SCOPUS:79351468771

SN - 1566-1199

VL - 12

SP - 516

EP - 519

JO - Organic Electronics

JF - Organic Electronics

IS - 3

ER -

Photopatternable, highly conductive and low work function polymer electrodes for high-performance n-type bottom contact organic transistors

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Keywords

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