Phototransistors based on InP HEMTs and their applications to millimeter-wave radio-on-fiber systems

Chang Soon Choi; Hyo Soon Kang; Woo Young Choi; Dae Hyun Kim; Kwang Seok Seo

doi:10.1109/TMTT.2004.839323

Phototransistors based on InP HEMTs and their applications to millimeter-wave radio-on-fiber systems

Chang Soon Choi, Hyo Soon Kang, Woo Young Choi, Dae Hyun Kim, Kwang Seok Seo

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

Phototransistors based on InP high electron-mobility transistors (HEMTs) are investigated for millimeter-wave radio-on-fiber system applications. By clarifying the photodetection mechanism in InP HEMTs, the phototransistor internal gain is determined. We present their use as millimeter-wave harmonic optoelectronic mixers and characterize them at the 60-GHz band. In order to evaluate the InP HEMT optoelectronic mixer performance, internal conversion gain is introduced and a maximum of 17 dB is obtained for 60-GHz harmonic optoelectronic up-conversion. Utilizing them, we construct a 60-GHz radio-on-fiber system and demonstrate 622-Mb/s data transmission over 30-km single-mode fiber and 3-m free space at 60-GHz band.

Original language	English
Pages (from-to)	256-262
Number of pages	7
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	53
Issue number	1
DOIs	https://doi.org/10.1109/TMTT.2004.839323
State	Published - Jan 2005

Keywords

High electron-mobility transistor (HEMT)
Optically controlled microwave device
Optoelectronic mixer
Photodetector
Phototransistor

Access to Document

10.1109/TMTT.2004.839323

Cite this

@article{6f5adf425cff4f9a8100916d10575cf2,

title = "Phototransistors based on InP HEMTs and their applications to millimeter-wave radio-on-fiber systems",

abstract = "Phototransistors based on InP high electron-mobility transistors (HEMTs) are investigated for millimeter-wave radio-on-fiber system applications. By clarifying the photodetection mechanism in InP HEMTs, the phototransistor internal gain is determined. We present their use as millimeter-wave harmonic optoelectronic mixers and characterize them at the 60-GHz band. In order to evaluate the InP HEMT optoelectronic mixer performance, internal conversion gain is introduced and a maximum of 17 dB is obtained for 60-GHz harmonic optoelectronic up-conversion. Utilizing them, we construct a 60-GHz radio-on-fiber system and demonstrate 622-Mb/s data transmission over 30-km single-mode fiber and 3-m free space at 60-GHz band.",

keywords = "High electron-mobility transistor (HEMT), Optically controlled microwave device, Optoelectronic mixer, Photodetector, Phototransistor",

author = "Choi, {Chang Soon} and Kang, {Hyo Soon} and Choi, {Woo Young} and Kim, {Dae Hyun} and Seo, {Kwang Seok}",

year = "2005",

month = jan,

doi = "10.1109/TMTT.2004.839323",

language = "English",

volume = "53",

pages = "256--262",

journal = "IEEE Transactions on Microwave Theory and Techniques",

issn = "0018-9480",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Phototransistors based on InP HEMTs and their applications to millimeter-wave radio-on-fiber systems

AU - Choi, Chang Soon

AU - Kang, Hyo Soon

AU - Choi, Woo Young

AU - Kim, Dae Hyun

AU - Seo, Kwang Seok

PY - 2005/1

Y1 - 2005/1

N2 - Phototransistors based on InP high electron-mobility transistors (HEMTs) are investigated for millimeter-wave radio-on-fiber system applications. By clarifying the photodetection mechanism in InP HEMTs, the phototransistor internal gain is determined. We present their use as millimeter-wave harmonic optoelectronic mixers and characterize them at the 60-GHz band. In order to evaluate the InP HEMT optoelectronic mixer performance, internal conversion gain is introduced and a maximum of 17 dB is obtained for 60-GHz harmonic optoelectronic up-conversion. Utilizing them, we construct a 60-GHz radio-on-fiber system and demonstrate 622-Mb/s data transmission over 30-km single-mode fiber and 3-m free space at 60-GHz band.

AB - Phototransistors based on InP high electron-mobility transistors (HEMTs) are investigated for millimeter-wave radio-on-fiber system applications. By clarifying the photodetection mechanism in InP HEMTs, the phototransistor internal gain is determined. We present their use as millimeter-wave harmonic optoelectronic mixers and characterize them at the 60-GHz band. In order to evaluate the InP HEMT optoelectronic mixer performance, internal conversion gain is introduced and a maximum of 17 dB is obtained for 60-GHz harmonic optoelectronic up-conversion. Utilizing them, we construct a 60-GHz radio-on-fiber system and demonstrate 622-Mb/s data transmission over 30-km single-mode fiber and 3-m free space at 60-GHz band.

KW - High electron-mobility transistor (HEMT)

KW - Optically controlled microwave device

KW - Optoelectronic mixer

KW - Photodetector

KW - Phototransistor

UR - http://www.scopus.com/inward/record.url?scp=12344263140&partnerID=8YFLogxK

U2 - 10.1109/TMTT.2004.839323

DO - 10.1109/TMTT.2004.839323

M3 - Article

AN - SCOPUS:12344263140

SN - 0018-9480

VL - 53

SP - 256

EP - 262

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

IS - 1

ER -

Phototransistors based on InP HEMTs and their applications to millimeter-wave radio-on-fiber systems

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this