Physical investigation of gate capacitance in In0.53Ga0.47As/In0.52Al0.48As quantum-well metal-oxide-semiconductor field-effect-transistors

Hyeon Bhin Jo; Jung Ho Park; Seung Woo Son; Ji Min Baek; Do Young Yun; Yeonsung Kang; Yong Hyun Seo; Lee Min Yung; Jung Hee Lee; Tae Woo Kim; Dae Hyun Kim

doi:10.1063/1.5034041

Physical investigation of gate capacitance in In_0.53Ga_0.47As/In_0.52Al_0.48As quantum-well metal-oxide-semiconductor field-effect-transistors

Hyeon Bhin Jo, Jung Ho Park, Seung Woo Son, Ji Min Baek, Do Young Yun, Yeonsung Kang, Yong Hyun Seo, Lee Min Yung, Jung Hee Lee, Tae Woo Kim, Dae Hyun Kim

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper, we aim to decompose gate capacitance components in InGaAs/InAlAs quantum-well (QW) metal-oxide-semiconductor field-effect-transistors (MOSFETs), in an effort to physically investigate their gate capacitance (C_g). First, we verified their validity with 1-D simulation and experimental C_g data in various types of InGaAs/InAlAs QW MOSFETs with different channel thickness (t_ch). Both quantum capacitance (C_Q) and centroid capacitance (C_cent) were highly relevant to total gate capacitance (C_g) of the InGaAs/InAlAs QW MOSFETs. Second, the total C_g did not saturate at a strong inversion regime. This is a consequence of the second subband inversion layer capacitance (C_inv-2) and, more importantly, its increase with V_G. Lastly, we studied the role of channel thickness (t_ch) scaling, which helps to increase the total gate capacitance by enhancing both C_Q and C_cent.

Original language	English
Article number	075203
Journal	AIP Advances
Volume	8
Issue number	7
DOIs	https://doi.org/10.1063/1.5034041
State	Published - 1 Jul 2018

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title = "Physical investigation of gate capacitance in In0.53Ga0.47As/In0.52Al0.48As quantum-well metal-oxide-semiconductor field-effect-transistors",

abstract = "In this paper, we aim to decompose gate capacitance components in InGaAs/InAlAs quantum-well (QW) metal-oxide-semiconductor field-effect-transistors (MOSFETs), in an effort to physically investigate their gate capacitance (Cg). First, we verified their validity with 1-D simulation and experimental Cg data in various types of InGaAs/InAlAs QW MOSFETs with different channel thickness (tch). Both quantum capacitance (CQ) and centroid capacitance (Ccent) were highly relevant to total gate capacitance (Cg) of the InGaAs/InAlAs QW MOSFETs. Second, the total Cg did not saturate at a strong inversion regime. This is a consequence of the second subband inversion layer capacitance (Cinv-2) and, more importantly, its increase with VG. Lastly, we studied the role of channel thickness (tch) scaling, which helps to increase the total gate capacitance by enhancing both CQ and Ccent.",

author = "Jo, {Hyeon Bhin} and Park, {Jung Ho} and Son, {Seung Woo} and Baek, {Ji Min} and Yun, {Do Young} and Yeonsung Kang and Seo, {Yong Hyun} and Yung, {Lee Min} and Lee, {Jung Hee} and Kim, {Tae Woo} and Kim, {Dae Hyun}",

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doi = "10.1063/1.5034041",

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AU - Jo, Hyeon Bhin

AU - Park, Jung Ho

AU - Son, Seung Woo

AU - Baek, Ji Min

AU - Yun, Do Young

AU - Kang, Yeonsung

AU - Seo, Yong Hyun

AU - Yung, Lee Min

AU - Lee, Jung Hee

AU - Kim, Tae Woo

AU - Kim, Dae Hyun

PY - 2018/7/1

Y1 - 2018/7/1

N2 - In this paper, we aim to decompose gate capacitance components in InGaAs/InAlAs quantum-well (QW) metal-oxide-semiconductor field-effect-transistors (MOSFETs), in an effort to physically investigate their gate capacitance (Cg). First, we verified their validity with 1-D simulation and experimental Cg data in various types of InGaAs/InAlAs QW MOSFETs with different channel thickness (tch). Both quantum capacitance (CQ) and centroid capacitance (Ccent) were highly relevant to total gate capacitance (Cg) of the InGaAs/InAlAs QW MOSFETs. Second, the total Cg did not saturate at a strong inversion regime. This is a consequence of the second subband inversion layer capacitance (Cinv-2) and, more importantly, its increase with VG. Lastly, we studied the role of channel thickness (tch) scaling, which helps to increase the total gate capacitance by enhancing both CQ and Ccent.

AB - In this paper, we aim to decompose gate capacitance components in InGaAs/InAlAs quantum-well (QW) metal-oxide-semiconductor field-effect-transistors (MOSFETs), in an effort to physically investigate their gate capacitance (Cg). First, we verified their validity with 1-D simulation and experimental Cg data in various types of InGaAs/InAlAs QW MOSFETs with different channel thickness (tch). Both quantum capacitance (CQ) and centroid capacitance (Ccent) were highly relevant to total gate capacitance (Cg) of the InGaAs/InAlAs QW MOSFETs. Second, the total Cg did not saturate at a strong inversion regime. This is a consequence of the second subband inversion layer capacitance (Cinv-2) and, more importantly, its increase with VG. Lastly, we studied the role of channel thickness (tch) scaling, which helps to increase the total gate capacitance by enhancing both CQ and Ccent.

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Physical investigation of gate capacitance in In_0.53Ga_0.47As/In_0.52Al_0.48As quantum-well metal-oxide-semiconductor field-effect-transistors

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