TY - GEN
T1 - Physically based DMOS transistor model implemented in SPICE for advanced power IC TCAD
AU - Chung, Yeonbae
AU - Burk, Dorothea E.
PY - 1995
Y1 - 1995
N2 - A physics-based predictive semi-numerical lateral DMOS transistor model, which is directly implemented in commercially available SPICE2G.6 source code, is described and verified with experimental measurements. Different from the existing power device subcircuit models, our model has an ability to account for the unique device structure such as the graded-channel and the non-planar-drift region. With an advantage of directly using device and process parameters, the new model implemented in SPICE may be useful in computer-aided power IC design.
AB - A physics-based predictive semi-numerical lateral DMOS transistor model, which is directly implemented in commercially available SPICE2G.6 source code, is described and verified with experimental measurements. Different from the existing power device subcircuit models, our model has an ability to account for the unique device structure such as the graded-channel and the non-planar-drift region. With an advantage of directly using device and process parameters, the new model implemented in SPICE may be useful in computer-aided power IC design.
UR - http://www.scopus.com/inward/record.url?scp=0029200186&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0029200186
SN - 0780326199
T3 - IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)
SP - 340
EP - 345
BT - IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)
T2 - Proceedings of the 1995 IEEE International Symposium on Power Semicomductor Devices and ICs
Y2 - 23 May 1995 through 25 May 1995
ER -