Porous Si/SnO2 nanowires heterostructures for H2S gas sensing

Jae Hoon Bang; Myung Sik Choi; Ali Mirzaei; Wansik Oum; Seungmin Han; Sang Sub Kim; Hyoun Woo Kim

doi:10.1016/j.ceramint.2019.09.010

Porous Si/SnO₂ nanowires heterostructures for H₂S gas sensing

Jae Hoon Bang
, Myung Sik Choi
, Ali Mirzaei
, Wansik Oum
, Seungmin Han
, Sang Sub Kim
, Hyoun Woo Kim

Research output: Contribution to journal › Article › peer-review

71 Scopus citations

Abstract

In this work, a low-temperature (100 °C) gas sensor based on heterojunctions of porous Si and SnO₂ nanowires (NWs) is presented. Porous Si was obtained from p-Si wafers by electrochemical etching, and SnO₂ NWs were fabricated by a vapor-liquid-solid route. Different characterization techniques were used to verify the formation of porous Si/SnO₂ NW heterojunctions. H₂S gas sensing results showed enhanced gas sensing performance of the porous Si/SnO₂ NW sensor in comparison with that of a porous Si sensor. The reasons for such enhancement are discussed in detail. This study demonstrates the promising effects of SnO₂ NWs in combination with porous Si to realize low-temperature H₂S gas sensors that are highly compatible with existing Si processing technology.

Original language	English
Pages (from-to)	604-611
Number of pages	8
Journal	Ceramics International
Volume	46
Issue number	1
DOIs	https://doi.org/10.1016/j.ceramint.2019.09.010
State	Published - Jan 2020

Keywords

Gas sensor
HS gas
Porous Si
Sensing mechanism
SnO NWs

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10.1016/j.ceramint.2019.09.010

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@article{3569cf40f1c5482fba1553e4357ad02c,

title = "Porous Si/SnO2 nanowires heterostructures for H2S gas sensing",

abstract = "In this work, a low-temperature (100 °C) gas sensor based on heterojunctions of porous Si and SnO2 nanowires (NWs) is presented. Porous Si was obtained from p-Si wafers by electrochemical etching, and SnO2 NWs were fabricated by a vapor-liquid-solid route. Different characterization techniques were used to verify the formation of porous Si/SnO2 NW heterojunctions. H2S gas sensing results showed enhanced gas sensing performance of the porous Si/SnO2 NW sensor in comparison with that of a porous Si sensor. The reasons for such enhancement are discussed in detail. This study demonstrates the promising effects of SnO2 NWs in combination with porous Si to realize low-temperature H2S gas sensors that are highly compatible with existing Si processing technology.",

keywords = "Gas sensor, HS gas, Porous Si, Sensing mechanism, SnO NWs",

author = "Bang, \{Jae Hoon\} and Choi, \{Myung Sik\} and Ali Mirzaei and Wansik Oum and Seungmin Han and Kim, \{Sang Sub\} and Kim, \{Hyoun Woo\}",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier Ltd and Techna Group S.r.l.",

year = "2020",

month = jan,

doi = "10.1016/j.ceramint.2019.09.010",

language = "English",

volume = "46",

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journal = "Ceramics International",

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T1 - Porous Si/SnO2 nanowires heterostructures for H2S gas sensing

AU - Bang, Jae Hoon

AU - Choi, Myung Sik

AU - Mirzaei, Ali

AU - Oum, Wansik

AU - Han, Seungmin

AU - Kim, Sang Sub

AU - Kim, Hyoun Woo

PY - 2020/1

Y1 - 2020/1

N2 - In this work, a low-temperature (100 °C) gas sensor based on heterojunctions of porous Si and SnO2 nanowires (NWs) is presented. Porous Si was obtained from p-Si wafers by electrochemical etching, and SnO2 NWs were fabricated by a vapor-liquid-solid route. Different characterization techniques were used to verify the formation of porous Si/SnO2 NW heterojunctions. H2S gas sensing results showed enhanced gas sensing performance of the porous Si/SnO2 NW sensor in comparison with that of a porous Si sensor. The reasons for such enhancement are discussed in detail. This study demonstrates the promising effects of SnO2 NWs in combination with porous Si to realize low-temperature H2S gas sensors that are highly compatible with existing Si processing technology.

AB - In this work, a low-temperature (100 °C) gas sensor based on heterojunctions of porous Si and SnO2 nanowires (NWs) is presented. Porous Si was obtained from p-Si wafers by electrochemical etching, and SnO2 NWs were fabricated by a vapor-liquid-solid route. Different characterization techniques were used to verify the formation of porous Si/SnO2 NW heterojunctions. H2S gas sensing results showed enhanced gas sensing performance of the porous Si/SnO2 NW sensor in comparison with that of a porous Si sensor. The reasons for such enhancement are discussed in detail. This study demonstrates the promising effects of SnO2 NWs in combination with porous Si to realize low-temperature H2S gas sensors that are highly compatible with existing Si processing technology.

KW - Gas sensor

KW - HS gas

KW - Porous Si

KW - Sensing mechanism

KW - SnO NWs

UR - https://www.scopus.com/pages/publications/85071522373

U2 - 10.1016/j.ceramint.2019.09.010

DO - 10.1016/j.ceramint.2019.09.010

M3 - Article

AN - SCOPUS:85071522373

SN - 0272-8842

VL - 46

SP - 604

EP - 611

JO - Ceramics International

JF - Ceramics International

IS - 1

ER -

Porous Si/SnO₂ nanowires heterostructures for H₂S gas sensing

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Keywords

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