Abstract
Potential energy surfaces of mechanically-induces structural failure and doping by silicon atom of graphene armchair nanoribbon (14 carbon dimers width, 14-AGNR) are studied by ab initio GGA LC DFT technique in combination with Gaussian-type basis set and periodic boundary conditions. Application of external force to a central atom of a perfect graphene nanoribbon leads to ejection of a carbon dimer or pulling out a polycumulene chain. Different mechanisms of mechanical substitution of carbon dimers by η2 coordinated silicon are studied. Migration of silicon adatom on graphene and embedding the atom into the lattice at the vicinity of divacancy induces formation of diamagnetic sp2d rectangular planar silicon dopant center. PES of formation of sp2d silicon center consists of several relatively low potential energy barriers, making possible a synthesis of novel 2D materials with unique physical properties.
Original language | English |
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Pages (from-to) | 168-175 |
Number of pages | 8 |
Journal | Computational Materials Science |
Volume | 125 |
DOIs | |
State | Published - 1 Dec 2016 |
Keywords
- Breathing deflection
- Doping
- Electronic structure
- Graphene nanoribbon