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Power efficient charge pump circuit in standard twin-well CMOS technology

  • Kyungpook National University

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

In this paper, we present a new charge pump circuit feasible for the implementation with standard twin-well CMOS process technology. The proposed charge pump employs PMOS-switching dual charge-transfer paths and a simple two-phase clock. Since charge transfer switches are fully turned on during each half of clock cycle, they transfer charges completely from the present stage to the next stage without suffering threshold voltage drop. During one clock cycle, the pump transfers charges twice through two pumping paths which are operating alternately. The performance comparison by simulations shows that the proposed charge pump exhibits the higher output voltage, the larger output current, and thus a better power efficiency over the traditional twin-well charge pumps.

Original languageEnglish
Title of host publication2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
DOIs
StatePublished - 2008
Event2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC - Hong Kong, China
Duration: 8 Dec 200810 Dec 2008

Publication series

Name2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

Conference

Conference2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
Country/TerritoryChina
CityHong Kong
Period8/12/0810/12/08

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