Practical application of diffusion pathway analysis for SiC-metal reactions

Diffusion pathway analyses and operation kinetics for SiC-/metal interface reaction have been investigated. To select the materials for an interlayer between an SiC and Ni reaction couple, a constructed chemical potential diagram has been utilized. When Cr was selected as the interlayer material for the SiC/Ni diffusion couple, the reaction pathway and product phase morphology have been modified by controlling the component flux. The strategy of modifying the diffusion pathway provides insight for achieving a stable interface design and for controlling the interface morphology within a kinetic bound.