Preparation and electrical properties of TiO₂ films prepared by sputtering for a pulse power capacitor

TiO₂ thin films for a pulse power capacitor were deposited by RF magnetron sputtering. The effects of the deposition gas ratio and thickness on the crystallization and electrical properties of the TiO₂ films were investigated. The crystal structure of TiO₂ films deposited on Si substrates at room temperature changed to the anatase from the rutile phase with an increase in the oxygen partial pressure. Also, the crystallinity of the TiO₂ films was enhanced with an increase in the thickness of the films. However, TiO₂ films deposited on a PET substrate showed an amorphous structure, unlike those deposited on a Si substrate. An X-ray photoelectron spectroscopy(XPS) analysis revealed the formation of chemically stable TiO₂ films. The dielectric constant of the TiO₂ films as a function of the frequency was significantly changed with the thickness of the films. The films showed a dielectric constant of 100~110 at 1 kHz. However, the dissipation factors of the films were relatively high. Films with a thickness of about 1000nm showed a breakdown strength that exceeded 1000 kV/cm.