Preparation of BaTiO3 films for MLCCs by direct vapor deposition

Sang Shik Park; Jae Ho Ha; Haydn N. Wadley

doi:10.1080/10584580802107809

Preparation of BaTiO₃ films for MLCCs by direct vapor deposition

Sang Shik Park, Jae Ho Ha, Haydn N. Wadley

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Abstract

BaTiO₃ films were deposited by the direct vapor deposition (DVD) technique to prepare thin dielectric layers for multilayer ceramic chip capacitors (MLCCs). The BaTiO₃ films were successfully prepared by co-evaporation of the BaTiO₃ ceramic and Ti metal source. The films deposited at room temperature and 600C were amorphous and crystalline phases, respectively. The intensity of (110) and (111) peaks increased as Ba/Ti ratios were close to stoichiometric composition. BaTiO₃ films deposited with e-beam power of 700 W showed the deposition rate of 33 nm/min. The dielectric constant and dissipation factor of BaTiO₃ films measured at 1 kHz were 150 180 and 2 5%, respectively. The capacitance decreased with increasing the temperature and varied only between 787pF and 752pF in the temperature range 15 125C.

Original language	English
Pages (from-to)	105-113
Number of pages	9
Journal	Integrated Ferroelectrics
Volume	99
Issue number	1
DOIs	https://doi.org/10.1080/10584580802107809
State	Published - 2008

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title = "Preparation of BaTiO3 films for MLCCs by direct vapor deposition",

abstract = "BaTiO3 films were deposited by the direct vapor deposition (DVD) technique to prepare thin dielectric layers for multilayer ceramic chip capacitors (MLCCs). The BaTiO3 films were successfully prepared by co-evaporation of the BaTiO3 ceramic and Ti metal source. The films deposited at room temperature and 600C were amorphous and crystalline phases, respectively. The intensity of (110) and (111) peaks increased as Ba/Ti ratios were close to stoichiometric composition. BaTiO3 films deposited with e-beam power of 700 W showed the deposition rate of 33 nm/min. The dielectric constant and dissipation factor of BaTiO3 films measured at 1 kHz were 150 180 and 2 5%, respectively. The capacitance decreased with increasing the temperature and varied only between 787pF and 752pF in the temperature range 15 125C.",

author = "Park, {Sang Shik} and Ha, {Jae Ho} and Wadley, {Haydn N.}",

year = "2008",

doi = "10.1080/10584580802107809",

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AU - Park, Sang Shik

AU - Ha, Jae Ho

AU - Wadley, Haydn N.

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N2 - BaTiO3 films were deposited by the direct vapor deposition (DVD) technique to prepare thin dielectric layers for multilayer ceramic chip capacitors (MLCCs). The BaTiO3 films were successfully prepared by co-evaporation of the BaTiO3 ceramic and Ti metal source. The films deposited at room temperature and 600C were amorphous and crystalline phases, respectively. The intensity of (110) and (111) peaks increased as Ba/Ti ratios were close to stoichiometric composition. BaTiO3 films deposited with e-beam power of 700 W showed the deposition rate of 33 nm/min. The dielectric constant and dissipation factor of BaTiO3 films measured at 1 kHz were 150 180 and 2 5%, respectively. The capacitance decreased with increasing the temperature and varied only between 787pF and 752pF in the temperature range 15 125C.

AB - BaTiO3 films were deposited by the direct vapor deposition (DVD) technique to prepare thin dielectric layers for multilayer ceramic chip capacitors (MLCCs). The BaTiO3 films were successfully prepared by co-evaporation of the BaTiO3 ceramic and Ti metal source. The films deposited at room temperature and 600C were amorphous and crystalline phases, respectively. The intensity of (110) and (111) peaks increased as Ba/Ti ratios were close to stoichiometric composition. BaTiO3 films deposited with e-beam power of 700 W showed the deposition rate of 33 nm/min. The dielectric constant and dissipation factor of BaTiO3 films measured at 1 kHz were 150 180 and 2 5%, respectively. The capacitance decreased with increasing the temperature and varied only between 787pF and 752pF in the temperature range 15 125C.

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Preparation of BaTiO₃ films for MLCCs by direct vapor deposition

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