Preparation of BaTiO₃ films for mlccs by direct vapor deposition

BaTiO₃ films were deposited by the direct vapor deposition (DVD) technique to prepare thin dielectric layers for multilayer ceramic chip capacitors (MLCCs). The BaTiOj films were successfully prepared by co-evaporation of the BaTiO₃ ceramic and Ti metal source. The films deposited-at room temperature and 600'C were amorphous and crystalline phases, respectively. The intensity of (110) and (111) peaks increased as Ba/Ti ratios were close to stoichiometric composition. BaTiO₃ films deposited with e-beam power of 700 W showed the deposition rate of 33 nm/min. The dielectric constant and dissipation factor of-BaTiOj films measured at 1 kHz were 150-180 and 2-5%, respectively. The capacitance decreased with increasing the temperature and varied only between 787pF and 752pF in the temperature range 15-125°C.