Prevention of hillock formation during micro-machining of silicon by using OTS-SAM and SiO2 coatings

T. S. Oh; H. J. Kim; D. E. Kim

doi:10.1016/j.cirp.2010.03.084

Prevention of hillock formation during micro-machining of silicon by using OTS-SAM and SiO₂ coatings

T. S. Oh, H. J. Kim, D. E. Kim

Yonsei University

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The feasibility of using a dual coating system consisting of SiO ₂ and OTS-SAM thin films on the micro-machining characteristics of silicon wafer were investigated with the aim to eliminate the formation of undesirable hillocks. The outermost OTS-SAM coating was used as a sacrificial layer to pattern the SiO₂ film, which in turn served to pattern the silicon substrate. After selectively removing the OTS-SAM coating by micro-machining, HF and KOH chemical etching processes followed to remove the SiO₂ layer and create patterns on the silicon substrate. By this process, groove patterns of about 1 μm width could be successfully fabricated on a silicon wafer without the formation of undesirable hillocks.

Original language	English
Pages (from-to)	259-262
Number of pages	4
Journal	CIRP Annals
Volume	59
Issue number	1
DOIs	https://doi.org/10.1016/j.cirp.2010.03.084
State	Published - 2010

Keywords

Micro-machining
OTS-SAM
Silicon

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10.1016/j.cirp.2010.03.084

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title = "Prevention of hillock formation during micro-machining of silicon by using OTS-SAM and SiO2 coatings",

abstract = "The feasibility of using a dual coating system consisting of SiO 2 and OTS-SAM thin films on the micro-machining characteristics of silicon wafer were investigated with the aim to eliminate the formation of undesirable hillocks. The outermost OTS-SAM coating was used as a sacrificial layer to pattern the SiO2 film, which in turn served to pattern the silicon substrate. After selectively removing the OTS-SAM coating by micro-machining, HF and KOH chemical etching processes followed to remove the SiO2 layer and create patterns on the silicon substrate. By this process, groove patterns of about 1 μm width could be successfully fabricated on a silicon wafer without the formation of undesirable hillocks.",

keywords = "Micro-machining, OTS-SAM, Silicon",

author = "Oh, \{T. S.\} and Kim, \{H. J.\} and Kim, \{D. E.\}",

year = "2010",

doi = "10.1016/j.cirp.2010.03.084",

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volume = "59",

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journal = "CIRP Annals",

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T1 - Prevention of hillock formation during micro-machining of silicon by using OTS-SAM and SiO2 coatings

AU - Oh, T. S.

AU - Kim, H. J.

AU - Kim, D. E.

PY - 2010

Y1 - 2010

N2 - The feasibility of using a dual coating system consisting of SiO 2 and OTS-SAM thin films on the micro-machining characteristics of silicon wafer were investigated with the aim to eliminate the formation of undesirable hillocks. The outermost OTS-SAM coating was used as a sacrificial layer to pattern the SiO2 film, which in turn served to pattern the silicon substrate. After selectively removing the OTS-SAM coating by micro-machining, HF and KOH chemical etching processes followed to remove the SiO2 layer and create patterns on the silicon substrate. By this process, groove patterns of about 1 μm width could be successfully fabricated on a silicon wafer without the formation of undesirable hillocks.

AB - The feasibility of using a dual coating system consisting of SiO 2 and OTS-SAM thin films on the micro-machining characteristics of silicon wafer were investigated with the aim to eliminate the formation of undesirable hillocks. The outermost OTS-SAM coating was used as a sacrificial layer to pattern the SiO2 film, which in turn served to pattern the silicon substrate. After selectively removing the OTS-SAM coating by micro-machining, HF and KOH chemical etching processes followed to remove the SiO2 layer and create patterns on the silicon substrate. By this process, groove patterns of about 1 μm width could be successfully fabricated on a silicon wafer without the formation of undesirable hillocks.

KW - Micro-machining

KW - OTS-SAM

KW - Silicon

UR - https://www.scopus.com/pages/publications/77955311031

U2 - 10.1016/j.cirp.2010.03.084

DO - 10.1016/j.cirp.2010.03.084

M3 - Article

AN - SCOPUS:77955311031

SN - 0007-8506

VL - 59

SP - 259

EP - 262

JO - CIRP Annals

JF - CIRP Annals

IS - 1

ER -

Prevention of hillock formation during micro-machining of silicon by using OTS-SAM and SiO₂ coatings

Abstract

Keywords

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